博碩士論文 104521023 完整後設資料紀錄

DC 欄位	值	語言
DC.contributor	電機工程學系	zh_TW
DC.creator	劉宗興	zh_TW
DC.creator	Chung-Hsing Liu	en_US
dc.date.accessioned	2017-8-11T07:39:07Z
dc.date.available	2017-8-11T07:39:07Z
dc.date.issued	2017
dc.identifier.uri	http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=104521023
dc.contributor.department	電機工程學系	zh_TW
DC.description	國立中央大學	zh_TW
DC.description	National Central University	en_US
dc.description.abstract	氮化鎵(GaN)功率電晶體具有高載子遷移率、高崩潰電壓、高電流密度、低導通電阻、低柵極電荷，以及低輸出電容等材料特性，適合用於功率電子電路中所需的高速開關。 本篇論文主要設計簡易測量電路用於量測空乏型氮化鎵功率電晶體之部分電性參數，電路設計的重點在校正測量開關切換時間、閘極電荷，以及閘極電壓-汲極電流曲線三種參數，以供後續功率電路設計所需，文中詳細說明測量電路設計以及量測方法，並比對測量值與估計值的誤差，因受限於所設計的測量電路，測量值誤差約達32%。	zh_TW
dc.description.abstract	Gallium Nitride (GaN) power transistors exist better material properties than Si-based transistors such as higher electron mobility, higher breakdown voltage, higher current density, lower on-state resistance, lower gate charge and smaller output capacitance. It is particularly suitable to function as high speed switches for power electronic circuit applications. The thesis aims to design a circuit module to measure three electrical parameters of depletion-mode GaN power transistors in order to provide information for power electronic circuit design. Three major parameters include switching time, gate charge, and DC-IV curve. A detailed description of the designed circuits is given and measurement results are compared to the estimation model. The measurement error is about 32% because of design issues of the circuit module.	en_US
DC.subject	空乏型	zh_TW
DC.subject	氮化鎵	zh_TW
DC.subject	閘極電荷	zh_TW
DC.subject	開關切換時間	zh_TW
DC.subject	Depletion-mode	en_US
DC.subject	GaN	en_US
DC.subject	gate charge	en_US
DC.subject	switching time	en_US
DC.title	高速空乏型氮化鎵功率元件參數驗證	zh_TW
dc.language.iso	zh-TW	zh-TW
DC.title	Parameter Verification of High Speed Depletion-Mode GaN Power Devices	en_US
DC.type	博碩士論文	zh_TW
DC.type	thesis	en_US
DC.publisher	National Central University	en_US