| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 鄒承翰 | zh_TW |
| DC.creator | Cheng-Han Tsou | en_US |
| dc.date.accessioned | 2018-1-23T07:39:07Z | |
| dc.date.available | 2018-1-23T07:39:07Z | |
| dc.date.issued | 2018 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=104521065 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 在過去的五十年來，以矽為主的互補式金氧半積體電路製程技術一直遵循摩爾定律，持續微縮電晶體尺寸並提升元件效能。但是在逐漸接近其物理極限的情況下，最近幾年有許多研究者極力探索各種新材料與新製程的解決方案。在許多新穎材料之中，三五族化合物半導體材料，如砷化鎵與砷化銦鎵，因具備高電子遷移率的優勢，被認為是n型通道電晶體最具潛力的候選材料。然而，此材料通常是以鈦/鉑/金作為歐姆接觸的金屬堆疊結構。在傳統的矽基材製程中，金被視為嚴重汙染源。為了適用於目前的矽基材積體電路製程，本研究開發一無金歐姆接觸金屬堆疊結構，並應用於砷化銦鎵n通道金氧半場效電晶體，以驗證其特性。
本論文研究提出以鈦/鋁矽銅合金作為砷化銦鎵的歐姆接觸金屬堆疊結構。經傳輸線模型(TLM)量測實驗顯示，此金屬堆疊結構的歐姆接觸在無退火的條件下，特徵接觸電阻值(ρc)可低至2.85×10-7 Ω-cm2。熱穩定性與長時間高電流應力測試也證明了其可行性。
本研究將此無退火歐姆接觸金屬堆疊結構應用於平面式與鰭式無接面砷化銦鎵金氧半場效電晶體。所製作之n-InGaAs MOSFET與FinFET通道寬度與閘極長度，分別為1.5 µm/0.7 µm與80 nm/40 nm。所量得之電流開關比(Ion/Ioff)分別約為104與102，最大汲極電流密度分別為216 µA/µm與38 µA/µm，次臨界斜率(S.S.)分別為180 mV/dec與350 mV/dec，且閘極漏電流密度約可低於1×10-3 µA/µm。
由本論文研究之實驗結果顯示，所提出之非合金歐姆接觸金屬堆疊結構極適用於n型砷化銦鎵金氧半場效電晶體，未來將可應用於三五/矽異質整合積體電路之製造。 | zh_TW |
| dc.description.abstract | For the past five decades, the development of Si-based CMOS manufacturing technology has been following Moore′s Law in shrinking the physical dimension and enhancing the device performance of integrated circuits. As the manufacturing technology approaches its limit, potential solutions in terms of materials and processes are explored extensively in recent years. Among many novel materials, III-V compounds such as GaAs and InGaAs, which have high electron mobility, are considered very promising for n-channel field-effect transistors (FETs). For these arsenide-based materials, Au-based metal stack for ohmic contacts is fairly popular and mature. However, Au is a notorious contaminant in Si processes, and is strictly prohibited in a Si fab. In this work, an Au-free ohmic contact metal stack is proposed and verified on n-channel InGaAs MOSFETs.
The proposed ohimic metal stack on n-type InGaAs consists of Ti (titanium) and AlSiCu (aluminum silicon copper alloy). Transmission line method (transfer length method, TLM) measurements indicate that specific contact resistivity (ρc) as low as 2.85×10-7 Ω-cm2 without post-metal annealing has been achieved without any alloying process. Thermal stability and current stress tests also demonstrate the feasibility of this ohmic contact stack.
This ohmic metal stack is applied to both InGaAs junctionless planar MOSFETs and fin field-effect transistors (FinFETs). The channel width (Wch) and gate length (Lg) of n-InGaAs MOSFETs and FinFETs are 1.5 µm/0.7 µm and 80 nm/40 nm, respectively. The n-InGaAs MOSFETs and FinFETs exhibit an Ion/Ioff ratio of 104 and 102, a maximum drain current density of 216 µA/µm and 38 µA/µm, and a subthreshold swing (S.S.) of 180 mV/dec and 350 mV/dec, respectively. The gate leakage current density of n-InGaAs MOSFET and FinFET is below 1×10-3 µA/µm.
As indicated by the results above, the non-alloyed Au-free ohmic contact stack is very suitable for n-InGaAs MOSFETs, and should be applicable to III-V/Si heterogeneous integrated circuits in the future. | en_US |
| DC.subject | 砷化銦鎵 | zh_TW |
| DC.subject | 金氧半場效電晶體 | zh_TW |
| DC.subject | 鳍式金氧半場效電晶體 | zh_TW |
| DC.subject | 無金歐姆接觸 | zh_TW |
| DC.subject | 鈦 | zh_TW |
| DC.subject | 鋁矽銅合金 | zh_TW |
| DC.subject | InGaAs | en_US |
| DC.subject | MOSFET | en_US |
| DC.subject | FinFET | en_US |
| DC.subject | Au-free ohmic contact | en_US |
| DC.subject | titanium | en_US |
| DC.subject | aluminum silicon copper alloy | en_US |
| DC.title | 開發具鈦/鋁矽銅歐姆接觸之砷化銦鎵金氧半場效電晶體 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Development of InGaAs Metal-Oxide-Semiconductor Field-Effect Transistors with Ti/AlSiCu Ohmic Contact | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |