| dc.description.abstract | In this thesis, a 94-GHz receiver front-end (RFE) in 90 nm CMOS technology is presented. The RFE integrates a five-stage low-noise amplifier, a broadband LO balun, a single-balanced mixer, and a doubler. The measurement system provides voltage conversion gain of 33 dB and double-sideband noise figure of 14 dB at the IF frequency of 10 MHz while only consuming 20.4 mW from a 1 V supply.
To verify the receiver front-end circuitry, improve circuit characteristics and system integrity, in chapter two, a 94-GHz receiver variable-gain in 90 nm CMOS integrated IPD process is presented. The CMOS chip is flipped and bonded onto the carrier through the transition. The advantages of IPD process are silicon substrate of high resistivity and low-loss metal to cut down the cost and improve the quality factor (Q) of passive components. However, we must verify the transition and calibrate the RF input loss of trace from GIPD to 90-nm interconnects by consideration of TRL de-embedding. The RX system which continuation of the previous chapter of the design include a five-stage low-noise amplifier, a broadband LO balun, a single-balanced mixer and a variable-gain amplifier. The measurement system provides voltage conversion gain of 48 dB, tuning range 40 dB at 86 GHz~92 GHz, IF bandwidth achieves 1.7 GHz at low gain and 1 GHz at high gain, the range of P1dB is -43.5 dBm ~ -29 dBm and double-sideband noise figure of 12.5 dB at the IF frequency of 10 MHz while iv consuming 62 mW from a 1 V and 1.2 V supply.
Finally, because of the wireless communication system popularity and the higher data rate. The third part is the design of the 200-GHz receiver using 40-nm CMOS technology. This circuit consists of antennas, VCOs, PLLs, LNAs, doublers, triplers, mixers, a TIA and a LA. The design of receiver is divided into two way from LNA to mixer and combine the in-phase current at mixer load to next stage, TIA. The simulated voltage gain from LNAs to TIA provide 32 dB, P1dB is -23 dBm and the IF bandwidth can achieve 13.4 GHz.
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