| DC 欄位 |
值 |
語言 |
| DC.contributor | 化學學系 | zh_TW |
| DC.creator | 柯耀進 | zh_TW |
| DC.creator | Yao-Jin Ke | en_US |
| dc.date.accessioned | 2018-8-2T07:39:07Z | |
| dc.date.available | 2018-8-2T07:39:07Z | |
| dc.date.issued | 2018 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=105223060 | |
| dc.contributor.department | 化學學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 雙炔基分子的固態結晶在照光之下可能進行固態聚合，形成具共軛的聚烯炔高分子。而在本研究，我們利用溶液剪切的方法，將雙炔基分子溶於有機溶劑中，利用刮板刮除給予的方向性外力，造成流體的傳輸同時溶劑揮發使雙炔基分子製作成有方向性的薄膜，而後照光聚合獲得一方向性共軛薄膜，並應用於製備場效電晶體。同時也分析了剪切製程中，影響薄膜結構的因素如濃度及速度等。
結果顯示雙炔基分子在低濃度且低剪切速度下能得到最具方向性聚合之高分子薄膜，長鏈的有機雙炔基分子比較容易拉出較均勻的薄膜，而最好的長鏈雙炔基分子則為10,12-pentacosadiynoic acid，並以拉曼、原子力顯微鏡等儀器測量並佐證膜的表面形貌、晶格排列的性質。
最後將薄膜應用於有機場效電晶體的半導體層，可透過電性比較觀察到共軛方向與非共軛方向的差異，然而因照光後會薄膜聚合會產生裂縫而阻礙電子傳遞，因此嘗試以二次剪切塗佈優化薄膜，並於電性方面有些許提升。 | zh_TW |
| dc.description.abstract | The diacetylenic molecules in their crystalline state may undergo topchemical polymerization under UV irradiation or heating to form a conjugated poly(eneyne) polymers. In this work, we prepared the solution of a series of linear diacetylenic molecules in organic solvent and shear the solution on a substrate with a scraper. The external shearing force caused the fluid between wafer and the substrate and then diactetylene molecules were transported while the solvent voporized to give a directional film. Then UV irradiation was applied to initialte polymerization to create directional conjugated film. The film structure was characterized by various tools including AFM, Raman, UV, etc. The film was also used as the conduction channel in the fabrication of field-effect transistor.
The results show that at low concentration and low shear rate, directional polymer film can best be prepared. The best material to make a good film is 10,12-pentacosadiynoic acid and the film structure was characterized by Raman and atomic force microscopy to confirm the directional morphology and lattice arrangement.
Finally, the film was used as the semiconductor layer in the fabrication of field-effect transistor. The mobilities along the shearing direction and that orthogonal to the shearing direction are compared. Polymerization was found to cause cracks and defects so that the mobility was diminished. A second solution shearing step over the cracked film appeared to improve the connectivity of the film and results in an order of improvement in electricity.
? | en_US |
| DC.subject | 有機場效電晶體 | zh_TW |
| DC.subject | 溶液剪切 | zh_TW |
| DC.subject | 雙炔基分子 | zh_TW |
| DC.title | 雙炔基分子以溶液剪切法製備之薄膜結構及應用於場效電晶體之研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |