| dc.description.abstract | Metal oxide semiconductor is a highly transparent electronic material, it has high carrier mobility and can be easily replaced by the amorphous silicon backplate technology. As we know, the most widely researched and developed is the indium gallium zinc oxide (InGaZnO，IGZO).
In first, we analyze the basic thin film characteristics of IGZO and SiOx, that is two important key of metal oxide thin film transistor (MO-TFT), and formed a MO-TFT with an etching stop structure which has carrier mobility of 15.8 cm2 / V·s and the current switching ratio over 107. We also successfully demonstrated an array backplane to driven a 5.5-inch liquid crystal display.
Then we focus on the high voltage device develop, because the MO-TFT operating under the high current and high electric field environment, such induced the joule heating near the drain side, simultaneously, the short channel brings the hot carrier effect, therefore, serious impact ionization occurs in the channel and lead to the TFT breakdown.
In order to improve the TFT breakdown caused by short channel elements under high voltage, we adjusted the oxygen flow during the deposition of InGaZnO thin film to reduce the carrier content in the active layer and inhibition the effect of the hot carrier. Finally, the MO-TFT with 8 μm channel length which operates at a gate voltage of 65 V and a drain voltage of 56 V can be without breakdown behavior.
Based on the results of this study, we confirm that the short channel MO-TFT can operate in a high electric field environment, not only as a display application, but also as a reference for the development of high-power device. | en_US |