| dc.description.abstract | polycrystalline zinc oxide has a high resistance value, so generally, in the application of a transparent conductive film, it is doped with ? elements (boron, aluminum, gallium, indium, etc.) to improve its conductivity and also improve its conductivity. Increase its high temperature stability.However, Single crystal zinc oxide (ZnO) is an N-type II-VI wide band gap semiconductor material with high transmittance in the visible range. It has similar properties to GaN and exciton binding energy is higher than GaN. Substituting GaN has become a material for UV LDs and LEDs .
In this study, the thermal field, flow field and species transfer simulation of MOCVD near-coupled spray-type anti-symmetric cavity were studied. At first, according to the chemical reaction formula of the grown ZnO thin film, a surface adsorption model was established to compare the effects of different adsorbed species and chemical reaction formulas on the growth efficiency of ZnO thin films. Ten gas phase chemical reaction schemes were simplified into three main chemical reaction formulas.
In the design of the cavity, the transparent conductive film is considered to be square. Therefore, a square reaction cavity is designed for the square film, and the large glass carrier is difficult to rotate, and the effect of uniform deposition of the species is achieved by opposing the staggered inlet holes. At the same time, the effect of changing process parameters on surface adsorption efficiency and film uniformity is discussed. The growth efficiency of ZnO thin film increases with the increase of process pressure. The growth rate increases with temperature and the slope increases with pressure. In addition, ZnO thin film growth efficiency, growth rate with pressure change When the process temperature increases, the slope increases; the flow rate increases, the growth efficiency of ZnO thin film increases, but the flow rate reaches a certain multiple does not increase the long rate; the inlet pore size increases, and the growth efficiency will increase, but the aperture reaches a certain value does not improve the growth efficiency. In this study, the parameters of the three venting radii within the set range are scanned to achieve the minimum error of the ZnO film uniformity. The simulation result is 20mm above the hole. The lowest uniformity error of the upper uniform hole 20mm, the middle suction hole 35mm and the lower suction hole 25mm will have the lowest uniformity error of 0.0802%. | en_US |