博碩士論文 105521024 完整後設資料紀錄

DC 欄位 語言
DC.contributor電機工程學系zh_TW
DC.creator吳孟昕zh_TW
DC.creatorMeng-Hsin Wuen_US
dc.date.accessioned2018-10-5T07:39:07Z
dc.date.available2018-10-5T07:39:07Z
dc.date.issued2018
dc.identifier.urihttp://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=105521024
dc.contributor.department電機工程學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract能源議題是近年來最重要的議題之一,目前人類最常使用的火力發電及核能發電都會產生無法利用的熱能,若是能夠利用熱電材料將這些熱能轉換成為電能,將能夠更有效的使用這些能源。 本研究使用輕摻雜之矽晶片,先在未拋光面鍍上鎳,進行矽化鎳反應後,利用一步金屬輔助化學蝕刻製作奈米線,進行P/N-type摻雜後進行封裝,量測範圍從室溫到473K,探討其熱電特性。zh_TW
dc.description.abstractThe energy issue is one of the most important issues in recent years. At present, the most commonly used thermal power generation and nuclear power generation will generate unutilized heat energy. If it can convert these thermal energy into electrical energy by using thermoelectric materials, it will be able to use these energy more effectively. In this study, a light-doped wafer was used. First, nickel was plated on the unpolished surface. After the silicide reaction, the nanowire was fabricated by one-step metal-assisted chemical etching, and the nanowire was doped and packaged. The thermoelectric properties measured was from room temperature to 473K.en_US
DC.subject矽奈米線zh_TW
DC.title矽基熱電元件開發及特性量測zh_TW
dc.language.isozh-TWzh-TW
DC.titleThe Research and Measurement of Si-based Thermoelectric Devicesen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

若有論文相關問題,請聯絡國立中央大學圖書館推廣服務組 TEL:(03)422-7151轉57407,或E-mail聯絡  - 隱私權政策聲明