| dc.description.abstract | Accompany with the graphene, the two dimensional material is also attracted particular attention due to the outstanding properties and potential for application. Besides, boron nitride is a III-V group combined with boron and nitrogen atomic that the stoichiometry is 1:1. For two dimensional material, hexagonal boron nitride is combined with boron and nitrogen in horizontal plane by sp2 bonded. Then, its particular property has large band gap (~5.7eV) and also it is only the isolator property in two dimensional group. In this isolator properties, hexagonal boron nitride can use at the dielectric layer, the flexible substrate and deep ultraviolet emitter. Recently, its point defect can change the band gap that is useful for the quantum emitter application.
In this study, we utilizes the low pressure chemical vapor deposition to grow two dimensional hexagonal boron nitride on the copper foil. By visiting the effect of hydrogen to argon ratio in as-copper and copper oxide foil, we need to find a suitable growth condition for suppress the density of h-BN nucleation. However, we find the density of nucleation that indeed can succeed to limit by copper oxide substrate at the initial time. After then, the nucleation will spring up like mushrooms because the copper oxide reduces very fast by hydrogen gas and the nucleation side was form by boron radical that it mainly precipitates from copper foil. Therefore, we also can use the JMAK model to prove the domination of mechanism of h-BN is from nucleation. This result can indicate the h-BN is always high density of nucleation and small grain on the copper foil. It mean that if effective controls boron concentration on substrate, it will grow large grain and low density of nucleation hexagonal boron nitride.
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