| dc.description.abstract | In recent years, a variety of carbon-related materials, such as carbon nanotubes, fullerene…, etc, has been discovered and the properties has been investigated. One of them, well-known graphene, attracts the interest in scientists and lift a burst of whirlwind due to the fantastic characteristics. It has been adopted for semiconductor device and has a wide range of applications including single molecule gas sensor, field effects transistors (FETs), solar cell, light-emitting diodes (LED), touch panels and so on. Nevertheless, defect formation on various materials is inevitable during fabrication process, which can dramatically influence the electronic, mechanical, thermal or chemical property. Hence, understanding the mechanism of defect formation and stably controlling defect is an enduring substantial issue. According to the intrinsic properties, graphene is not equipped with band gap. By production of defect, band gap of graphene can be opened and then become n-type or p-type semiconductor by binding with different dopants. Despite of many researches on graphene for decades, the mechanism of defect formation and the technique of controlling defect is still not quite complete. In this literature, we will artificially produce defect on supported graphene by implanting carbon ions at different doping concentration, and discuss the intrinsic, as-implanted and post-annealing properties on silicon dioxide (SiO2) and gallium nitride (n-GaN) substrates. Comparing with different substrates, we can investigate the influence of supporting atoms and the rough surface on graphene. Furthermore, intrinsic properties of each sample is different from one to another, based on method to fabricating and transferring and amount of grain boundary, corrugations, absorption of gas and so on. Thus, we demonstrate the reproduction ability of graphene characteristics under the same processing and conditions. Corresponding to substantially important topic of stably controlling the properties of graphene in semiconductor devices, this is an advantageous research in industry. | en_US |