博碩士論文 106226021 完整後設資料紀錄

DC 欄位 語言
DC.contributor光電科學與工程學系zh_TW
DC.creator邱盈蒼zh_TW
DC.creatorYing-Cang Qiuen_US
dc.date.accessioned2020-1-7T07:39:07Z
dc.date.available2020-1-7T07:39:07Z
dc.date.issued2020
dc.identifier.urihttp://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=106226021
dc.contributor.department光電科學與工程學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract本論文以製作微米尺寸垂直式有機發光電晶體(Vertical organic light-emitting transistors, VOLETs)陣列為主,除了詳細說明8×8點矩陣式面板的設計與製作流程之外,還清楚解釋其背後原因。 透過原子層沉積(ALD)及曝光顯影等技術,製作出垂直式有機發光電晶體面板。使用ALD沉積高介電係數的三氧化二鋁與氧化鉿作為雙層介電層,並以ALD沉積N-type半導體材料氧化鋅,同時搭配綠光有機材料PFO:F8BT作為發光層。藉由顯影蝕刻方式將氧化鋅做微小圖案化,以達到單一像素尺寸最小可達到10μm×15μm的發光面積。透過光學微影技術,將每一道光罩圖案精準製作在元件上,使微小面積下有64個單一垂直式有機發光電晶體。同時發現電荷下注入式的垂直有機發光電晶體結構中,裸露出的氧化鋅面積與發光面積是一致的,利用此現象來定義發光面積。最後利用Arduino微控制器對面板進行驅動並成功發出10μm×15μm面積的綠光。 zh_TW
dc.description.abstractIn this thesis, micro-sized Vertical organic light-emitting transistors (VOLETs) arrays, in addition to explaining the design and manufacturing process of 8 × 8 dot matrix panel in detail, the reasons behind it are also explained clearly. Through the technologies of atomic layer deposition (ALD) and exposure development, a vertical organic light-emitting transistor panel is fabricated. ALD was used to deposit aluminum oxide and hafnium oxide with a high dielectric constant as a double-layer dielectric layer, and ALD was used to deposit an N-type semiconductor material, zinc oxide, and a green organic material, PFO: F8BT, was used as a light-emitting layer. The zinc oxide is micro-patterned by a development etching method, so as to achieve a minimum light emitting area of a single pixel size of 10 μm × 15 μm. Through optical lithography technology, each photomask pattern is accurately fabricated on the substrate , so that there are 64 cell of the vertical organic light-emitting transistors under the micro size area. At the same time, it was found that in the vertical organic light-emitting transistor structure of the downward injection type of charge, the area of the exposed zinc oxide and the light-emitting area are consistent, and this phenomenon is used to define the light-emitting area. Finally, the panel is driven by an Arduino microcontroller and a 10μm × 15μm area is successfully radiant green light. en_US
DC.subject垂直式有機電晶體zh_TW
DC.subject垂直式有機發光電晶體zh_TW
DC.subject高介電常數介電層zh_TW
DC.subject面板設計zh_TW
DC.subject微影製程zh_TW
DC.subjectVertical Organic Transistorsen_US
DC.subjectVertical Organic Light-emitting Transistorsen_US
DC.subjectHigh-k Dielectric Layeren_US
DC.subjectPanel Designen_US
DC.subjectphotolithographyen_US
DC.title垂直式有機發光電晶體 之點矩陣式微米尺寸面板設計與製作zh_TW
dc.language.isozh-TWzh-TW
DC.titleVertical Organic Light-emitting Transistors of the Micron Size Panel Design and Fabricationen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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