| DC 欄位 |
值 |
語言 |
| DC.contributor | 光電科學與工程學系 | zh_TW |
| DC.creator | 曾品嘉 | zh_TW |
| DC.creator | Pin-Chia Tseng | en_US |
| dc.date.accessioned | 2019-8-21T07:39:07Z | |
| dc.date.available | 2019-8-21T07:39:07Z | |
| dc.date.issued | 2019 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=106226033 | |
| dc.contributor.department | 光電科學與工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | CH3NH3PbI3鈣鈦礦薄膜太陽能電池的光電轉換效率已達到 24.2%，全球的科學家正透過材料改質來改善此類太陽能電池的穩定性問題，在這個論文，我們選擇雙鈣鈦礦薄膜做為元件的主動層，並分析光鈣鈦礦薄膜的表面、結構、光學與激發態特性。本論文採用的太陽能電池架構為：Ag/PCBM/MAxCs1-xPb(IxBr1-x)3/ PEDOT:PSS/ITO/glass。Ag為陰極、ITO(氧化銦錫)為陽極; phenyl-C61-butyric acid methyl ester (PCBM)是電子傳輸層與poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)是電洞傳輸層; MAxCs1-xPb(IxBr1-x)3則是元件的吸光層。
以MA0.8Cs0.2Pb(I0.8Br0.2)3雙鈣鈦礦薄膜做為太陽能電池的吸光層，能獲得最高的功率轉換效率與相對穩定的太陽能電池。透過製程條件的優化，獲得的最高的功率轉換效率（power conversion efficiency，PCE）為9.71％，此元件的短路電流密度（short-circuit current density, JSC）為15.7 mA / cm2、開路電壓（open-circuit voltage, VOC）為1.01 V和填充係數（fill factor, FF）為59.75％。
經過120天的穩定性量測後，MA0.8Cs0.2Pb(I0.8Br0.2)3薄膜太陽能電池的PCE降幅為42.21%；MAPbI3薄膜太陽能電池的PCE降幅為53.91%。代表MA0.8Cs0.2Pb(I0.8Br0.2)3薄膜太陽能電池較為穩定。
| zh_TW |
| dc.description.abstract | The highest power conversion efficiency (PCE) record of CH3NH3PbI3 based thin-film solar cells is up to 24.2%. In order to improve the device stability of the perovskite solar cell , researchers are engaged to modify the light absorbing material (LAM), electron transport layer (ETL) and hole transport layer (HTL). In this research, the double perovskite thin films were applied to the LAM. The structural, surface, optical and excitonic properties of double perovskite thin films were investigated to understand the device physics. The device structure is Ag/PCBM/perovskite/PEDOT:PSS/ITO/glass. Ag and ITO are used as the cathode and anode, respectively. PCBM and PEDOT:PSS are used as the ETL and HTL, respectively. MAxCs1-xPb(IxBr1-x)3 double perovskite thin film is used as the LAM.
When the MA0.8Cs0.2Pb(I0.8Br0.2)3 thin film was used as the LAM, the best PCE of 9.71% can be obtained, which corresponded to the short-circuit current density of 15.7 mA/cm2, the open-circuit voltage of 1.01 V and the fill factor of 59.75%. After 120 days of stability measurement, the PCE of the MA0.8Cs0.2Pb(I0.8Br0.2)3 thin film solar cell decreased by 42.21% ; the PCE of the MAPbI3 thin film solar cell decreased by 53.91% ,so MA0.8Cs0.2Pb(I0.8Br0.2)3 thin film solar cell is relatively stable.
| en_US |
| DC.subject | 鈣鈦礦太陽能電池 | zh_TW |
| DC.subject | 穩定性 | zh_TW |
| DC.subject | perovskite solar cells | en_US |
| DC.subject | stability | en_US |
| DC.title | 反式雙鈣鈦礦MAxCs1-xPb(IxBr1-x)3薄膜太陽能電池之特性研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Investigations of Inverted-type Double Perovskite MAxCs1-xPb(IxBr1-x)3 Thin Film Solar Cells | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |