| DC 欄位 |
值 |
語言 |
| DC.contributor | 物理學系 | zh_TW |
| DC.creator | 劉哲瑋 | zh_TW |
| DC.creator | Jhe-Wei Liou | en_US |
| dc.date.accessioned | 2021-5-17T07:39:07Z | |
| dc.date.available | 2021-5-17T07:39:07Z | |
| dc.date.issued | 2021 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=106282004 | |
| dc.contributor.department | 物理學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 利用缺陷調控石磨烯的能帶結構在擴展石磨烯的電子元件應用上非常重要。其中氫化是石墨烯中有著最單純結構的缺陷，這使得氫化缺陷是可以被還原的。這有助於缺陷濃度與能帶結構的調控。製作電子元件的過程中，圖樣定義是必不可少的技術。其中偏壓式掃描探針微影技術(b-SPL)是一種無光阻的微影技術，可以直接局部改變石墨烯的特性。這減少了不必要的污染與並且能有更好的邊緣缺陷控制。除此之外，通過調整b-SPL的偏壓可以產生氧化或氫化石墨烯。在之前的研究中，b-SPL氧化石墨烯的缺陷與機制都被完整的探討。然而，利用b-SPL在石墨烯上產生的氫化缺陷卻沒有深入的研究與表徵。
在本篇研究中，我們使用熱還原過程比較正負偏壓b-SPL在石墨烯上產生的缺陷的性質。X射線光電子能譜(XPS)與拉曼光譜分別探測了缺陷的化學組成與結構破壞程度。我們發現負偏壓b-SPL產生低濃度氧化與高比例的結構缺陷。而正偏壓b-SPL則產生氫化與較少的結構缺陷。局部的電阻量測更進一步證實正偏壓b-SPL產生氫化缺陷的可逆電性。本篇研究發現b-SPL的局部缺陷控制與精密的缺陷空間分布控制，使得b-SPL成為一個有潛力直接製作石墨烯元件的可靠技術。 | zh_TW |
| dc.description.abstract | Hydrogenation was the simplest method to chemically modulate the band structure of graphene. It has been reported that hydrogenation on graphene was reversible in both lattice structure and electrical property. For further application, the nanofabrication technology for hydrogenation on graphene was needed. Bias-induced scanning probe lithography (b-SPL) is a resist-less tool that can locally modify graphene properties. In addition, it can locally oxidize or hydrogenate graphene by tuning the bias between graphene and the tip. In our previous work, the oxygen-related defects on graphene generated by b-SPL with negative tip bias have been well investigated. The b-SPL generated both structural defects and oxidation on graphene. However, the hydrogenation of graphene through the b-SPL is not fully explored.
In this study, we compare the properties of defects produced on graphene by b-SPL using a thermal reduction process. x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were performed to investigate the chemical composition and structural damage, respectively. We found that negative b-SPL produced a low concentration of oxidation with a high proportion of structural defects. Positive b-SPL, on the other hand, produces hydrogenation and a lower density of structural defects. Local resistivity measurements further confirm the reversible electrical properties of the positive b-SPL to produce hydrogenated defects. This study concludes that the local defect control and precise defect spatial distribution control of b-SPL make b-SPL a promising and robust technique for the direct fabrication of graphene components. | en_US |
| DC.subject | 石墨烯 | zh_TW |
| DC.subject | 缺陷 | zh_TW |
| DC.subject | 掃描探針微影技術 | zh_TW |
| DC.subject | 氫化 | zh_TW |
| DC.subject | 氧化 | zh_TW |
| DC.subject | graphene | en_US |
| DC.subject | defect | en_US |
| DC.subject | scanning probe lithography | en_US |
| DC.subject | hydrogenation | en_US |
| DC.subject | oxidation | en_US |
| DC.title | 氫化與氧化探針微影技術在石墨烯上產生缺陷的探討 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Characterizations of defects in graphene through hydrogenation and oxidation scanning probe lithography | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |