dc.description.abstract | Graphene has many excellent unique features, such as high optical transparency, excellent carrier mobility, and high mechanical strength, etc. and expected for next-generation flexible and electronic devices. Chemical vapor deposition (CVD) is the method for the synthesis of high-quality and large-area graphene; but, the area of as-grown graphene always limits by the size of the reaction furnace, which reduces production efficiency. In this experiment, we provide a developed method that improves production capacity to synthesis large-area monolayer and multilayer graphene using rolled-up copper foil with the spacer within in 1-inch furnace. Furthermore, the different materials such as carbon cloth, carbon paper, copper foam, and nickel foam selected as the spacer and the quality of as-prepared graphene further discussed. The spacer is to avoid the stacking copper foil adhesion during the high-temperature process. Among them, the carbon cloth is the suitable spacer material for synthesis monolayer graphene because of its structure, which allows reaction gas diffusion, and most important is stable during the high-temperature process. The largest area of monolayer graphene can achieve 900 cm2; the sheet resistance is around 0.94 kΩ/□, I2D/IG = 1.51 ± 0.21, ID/IG = 0.14 ±0.04. On the other hand, the nickel foam selected as the spacer for synthesis multilayer graphene, the available area of multilayer graphene is 100 cm2; and the average thickness that examined with the light transmittance is four to five layers. Finally, the production capacity can reach 0.23m2/h with a rolled-up structure, which is about 450% higher than the stacked planar copper foil in a 1-inch furnace. The production efficiency can increase to 8.69 m2/h and 15.57 m2/h when extending to a six or eight-inch furnace. Therefore, this experiment proposes a method to improve the production capacity and synthesize highly crystalline graphene, which is available for the future production and application of flexible materials. | en_US |