博碩士論文 106324027 完整後設資料紀錄

DC 欄位 語言
DC.contributor化學工程與材料工程學系zh_TW
DC.creator游芷欣zh_TW
DC.creatorChih-Hsin Yuen_US
dc.date.accessioned2020-10-12T07:39:07Z
dc.date.available2020-10-12T07:39:07Z
dc.date.issued2020
dc.identifier.urihttp://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=106324027
dc.contributor.department化學工程與材料工程學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract此論文以醌型為結構之 n型小分子 作 為有機半導體材料,利用溶液製程 中的剪切力塗 布 法製作出高結晶性與單一方向性之有機場效應電晶體。 一 系列以噻吩並異靛藍 (thieno-isoindigo) 為核心 的醌型 (quinoidal) n型小分 子 DTPQ 發展 出 具有 直鏈 (DTPQ-10)和不同支點位置 DTPQ-b8,,-b16,,-b17)的四種材料,並對有機場效應電晶體中薄膜微結構、分子堆疊 排列和電荷傳輸之間的關係進行了系統的研究。 改變側鏈長度與支點位置對於分子堆疊、結晶性和元件性能產生的影 響,利用紫外光 -可見光光譜儀、光學顯微鏡、原子力顯微鏡和低掠角 廣角 X光繞射分析。 DTPQ-b16支點 距離主鏈兩個碳 與較長 支 鏈長 度 ,由於 高 結 晶性、 晶 粒大 且分子排列具有單一方向性有利於電荷傳輸 因此得到最高電 子遷移率為 2.54 cm2 V-1 s-1、 電流開關 也 比超過 105。相反的, DTPQ-b8支 點距離主鏈兩個碳 與較短 支 鏈長 度 ,顯示較差溶解度不利於層層堆疊,得到 電子遷移率為 0.72 cm2 V-1 s-1。 DTPQ-b17支點距離主鏈三個碳 ,於薄膜形 貌上出現明顯裂痕,不利於電荷傳輸,得到電子遷移率為 0.192 cm2 V-1 s-1。 直鏈的 DTPQ-10,也有較差溶解度,且分子呈現面朝上 (face-on)的排列與較 差的薄膜形貌,得到最低電子遷移率為 0.013 cm2 V-1 s-1。 同時DTPQ系列存放於控制濕度30~40%的大氣環境下超過一個月,並維持良好的空氣穩定度。zh_TW
dc.description.abstractA specific design for solution-sheared organic semiconductors would be an effective approach to achieve high performance of organic field effect transistor (OFET) with high crystallinity and uniaxial alignment. Based on a series of thieno-isoindigo based quinoidal n-type small molecules DTPQ with alkyl-chain lengths (DTPQ-10) and different branching positions (DTPQ-b8, -b16, -b17) were developed. The effect of the length and branching position of alkyl chains on charge transport, molecular packing and crystallinity are investigated by UV-vis spectroscopy, atomic force microscopy (AFM), grazing incidence wide angle X-ray diffraction (GIWAXD). DTPQ-b16 with branching point at two position away the backbone with longer branch length, results in high crystallinity, larger grain size and well orientation exhibit the maximum electron mobility (μe) up to 2.54 cm2 V-1 s-1, ON/OFF ratio (ION /IOFF) over than 105. In contrast, DTPQ-b8 with branching point at two position away the backbone with shorter branch length, results in poor solubility, which is disadvantage to build the lamella stacking structure, and lead to an electron mobility of 0.72 cm2 V-1 s-1. DTPQ-b17 with branching point at third position away the backbone showed obvious crack on film morphology, which are highly disadvantage to charge transport, and an electron mobilities reaching 0.192 cm2 V-1 s-1. Last, DTPQ-10 with linear alkyl chain results in poor solubility with face-on molecular packing and bad morphology exhibit the lowest electron mobility of 0.013 cm2 V-1 s-1. Especially, these four DTPQs OFETs show excellent air stability, where the devices were stored in ambient condition (room temperature; relative humidity 30~40%) for over one month.en_US
DC.subject有機場效應電晶體zh_TW
DC.subjectOFETen_US
DC.title溶液剪切力 法製備醌型噻吩並異靛藍 (DTPQ) N型小分子 半 導體於有機場效應電晶 體 應用zh_TW
dc.language.isozh-TWzh-TW
DC.titleSolution-Sheared Thienoisoindigo based Quinoidal (DTPQ) N-Type Small Molecular Semiconductors for Organic Field Effect Transistor Applicationen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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