博碩士論文 106324048 完整後設資料紀錄

DC 欄位 語言
DC.contributor化學工程與材料工程學系zh_TW
DC.creator林珈琪zh_TW
DC.creatorChia-Chi LINen_US
dc.date.accessioned2018-8-2T07:39:07Z
dc.date.available2018-8-2T07:39:07Z
dc.date.issued2018
dc.identifier.urihttp://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=106324048
dc.contributor.department化學工程與材料工程學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract本研究利用溶液製程並透過剪切力塗佈法製作有機薄膜電晶體元件,主要研究於有機薄膜層,由於之前實驗室製作含硫碳鏈之p-type有機小分子材料SBT,有機薄膜元件電性達1.7 cm2V-1s-1。本研究將硒取代硫原子運用不同鍊長的含硒碳鏈之聯?吩(selenylated bithiophene; SeBT)為核心,核心頭尾兩端接上三併環?吩(2,6-di(dithieno[3,2-b;2’,3’-d]-thiophen-2yl; DDTT)為主軸,合成本研究使用得P-type有機小分子半導體材料DDTT-SeBT-C6、DDTT-SeBT-C10及DDTT-SeBT-C14。 隨著含硒碳鏈長的增加,載子遷移率從DDTT-SeBT-C6 0.09 cm2V-1s-1,增加至DDTT-SeBT-C10 0.06 cm2V-1s-1,再增加至DDTT-SeBT-C14 4.01 cm2V-1s-1,並利用光學顯微鏡、原子力顯微鏡等儀器分析其表面形貌。其中,DDTT-SeBT-C6薄膜呈現不連續狀,DDTT-SeBT-C10從GIXRD可發現結晶性不佳,所以造成電性不佳,反之,DDTT-SeBT-C14表面形貌呈現連續性且結晶性佳,得到優異的電性表現載子遷移率4.01 cm2V-1s-1,我們利用單晶可知,當側鍊較長時,可改善主軸扭轉角使分子呈平面性提高載子遷移率。zh_TW
dc.description.abstractThis study research new small molecule semiconductors via solution shearing manufacture organic thin film transistors. Owing to the previous work thio-alkyl substituted bithiophene (SBT), the organic thin film transistor electrical properties is 1.7 cm2V-1s-1. The series of new small molecules is selenylated bithiophene with different alkyl side chains. Then, add 2,6-di(dithieno[3,2-b;2’,3’-d]-thiophen-2yl (DDTT) to become the main backbone on the both side of the core. As the carbon length increase, the carrier mobility increases from DDTT-SeBT-C6 0.09 cm2V-1s-1 to DDTT-SeBT-C14 4.01 cm2V-1s-1. The surface morphology was analyzed by optical microscopy, atomic force microscopy, grazing incidence x-ray diffraction, UV-vis spectrophotometer. In these three molecules, the morphology of DDTT-SeBT-C6 is discontinuity. The crystallinity of DDTT-SeBT-C10 is worse. That the reason why they get the poor electrical properties. However, the morphology of DDTT-SeBT-C14 is continuity and the high crystallinity. When the side length increase, the torsion angle can be improved to make the backbone planar to improve the carrier mobility.en_US
DC.subject溶液製程zh_TW
DC.subject剪切力塗佈zh_TW
DC.subject有機小分子半導體材料zh_TW
DC.subject有機薄膜電晶體zh_TW
DC.subjectOTFTen_US
DC.subjectsolution shearingen_US
DC.subjectorganic small molecule semiconductoren_US
DC.title剪切力溶液製程應用於高效能有機薄膜電晶體:含硒碳鏈聯?吩小分子半導體材料zh_TW
dc.language.isozh-TWzh-TW
DC.titleSelenium-Alkyl Bithiophene(SeBT)-Based Small Molecular Semiconductors via Solution Sheared Method for High-Performance Organic Thin-Film Transistorsen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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