| dc.description.abstract | This study builds a simple and accurate SPICE model for gallium nitride transistors to provide circuit designers so that they can design circuits according to the application and needs. First of all, the basic characteristics of the GaN HEMTs are measured, including the output characteristics, capacitance-voltage curve, dynamic double-pulse test circuit measurement, and the output characteristics at different temperatures. In the past, to establish SPICE model, the segmented equations was used to describe the transistors in the cut-off, linear and saturation regions. However, the behavioral model of GaN HEMTs with segmented equations suffers from
the simulation convergence problem and leads the long simulation time in practice. the use of this non-segmented equation can lead to non-convergence and long simulation time. In order to improve the simulation convergence, this paper proposes a behavioral model which uses nonsegmented, smooth continuous equations to describe the static and dynamic characteristics of GaN HEMTs. In order According to modify the behavior equations and adjustment the parameters to make the simulation and the measurement data fit smoothly. Finally, the double-pulse test circuit is used to verify the switching characteristics of the GaN HEMTs, and a
complete SPICE model is established.
On the other hand, the reverse conduction characteristics of GaN HEMTs are also an important issue for circuit applications, because a freewheeling path of current is required to prevent excessive voltage drop across the devices and prevent the large conduction losses. This
study will measure the characteristics of the reverse conduction region for the conventional GaN HEMT and the modified GaN HEMT, and then compare the differences between these two devices, also builds a reverse SPICE model for the modified GaN HEMT. | en_US |