| dc.description.abstract | This thesis proposes a 85-GHz power amplifier, which is applied to 340-GHz transmitter of imaging radar, is using TSMC 40-nm CMOS technology for realizing. Two-stage differential power amplifier is implemented with common source mode. The neutralizing capacitor mitigates the intrinsic gate-drain feedback of each transistor for increasing power gain and stability. Transformers act as resonator coupling networks, which work as impedance matching networks and baluns. The on-wafer measurement results of 85-GHz power amplifier provide Psat of 10.85 dBm, OP1dB of 10.76 dBm, and maximum PAE of 8.5%.
Owing to high-speed requirement of data, quality of multimedia, and multimedia communication of mobile phone, the data rate of wireless communication system is getting faster and faster. This thesis proposes a 100-GHz power amplifier of 200-GHz high-speed ASK wireless transmitter using TSMC 40-nm CMOS technology. The design flow is the same as previous, using neutralizing capacitors for increasing the stability and gain, and using transformers for impedance matching networks. The simulation results of 100-GHz power amplifier, with 0.9 V supply voltage, provide Psat of 10.9 dBm, OP1dB of 7.4 dBm, maximum PAE of 11%, and the 3-dB bandwidth of 25.3%. The circuits of 200-GHz ASK wireless transmitter consist of a voltage control oscillator, a decoder, a buffer, a voltage amplifier, a power amplifier, a doubler, an ASK moduler, and a dielectric resonator antenna. The radiated output power reaches to 0.3 dBm at 200-GHz. After sending the modulated signal to ASK moduler via bondwire interconnect of PCB, the data rate of this transmitter can reach to 20-Gbps. | en_US |