| DC 欄位 |
值 |
語言 |
| DC.contributor | 光電科學與工程學系 | zh_TW |
| DC.creator | 李林祥 | zh_TW |
| DC.creator | Lin-Hsiang Lee | en_US |
| dc.date.accessioned | 2020-11-10T07:39:07Z | |
| dc.date.available | 2020-11-10T07:39:07Z | |
| dc.date.issued | 2020 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=107226018 | |
| dc.contributor.department | 光電科學與工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 二硫化鉬薄膜為具有能隙(bandgap)之二維材料，當其應用於半導體元
件具有高開關比的特性。本論文使用一階段與二階段化學氣相沉積法沉積
法沉積二硫化鉬薄膜以探討其光電特性與均勻性。一階段化學氣相沉積法
製成的二硫化鉬薄膜，拉曼光譜圖兩特徵峰值的差額(delta k)為 19.2cm-1到25.6cm-1，層數為一到六層，雙層之二硫化鉬薄膜均勻性可達到 15mm。二階段化學氣相沉積法製成的二硫化鉬薄膜，拉曼光譜圖兩特徵峰值的差額(delta k)為 20.7cm-1 到 23.6cm-1，層數為一到三層，雙層之均勻性為整片750mm2之範圍。
此外本研究也使用 X 射線光電子能譜儀，做薄膜元素分析與計算元素
百分比。使用 X 射線繞射儀，分析二硫化鉬薄膜的晶格。使用可見光光譜儀與光激發螢光光譜儀，對照文獻，分析二硫化鉬薄膜在布里淵區 k點位置的激子躍遷行為。另外本研究也放置大型的藍寶石基板，比較一階段化學氣相沉積與二階段化學氣相沉積法沉積的二硫化鉬薄膜之均勻性。一階段化學氣相沉積法沉積的二硫化鉬薄膜較容易受到爐管內因素影響，本實驗放置3 × 9cm的大型藍寶石基板，並比較不同位置的均勻性。二階段化學氣相沉積法沉積的二硫化鉬薄膜，均勻性與石英爐管腔體內基板擺放位置等因素無關，僅與濺鍍鉬薄膜均勻度有關，本實驗放置3 × 2.5cm的大型藍寶石基板，並在上面沉積出均勻的薄膜。 | zh_TW |
| dc.description.abstract | Molybdenum disulfide (MoS2) thin film is a kind of 2D material with a proper
bandgap, and high switching ratio when applied to be the device. One-step and
two-step chemical vapor depositions(CVD) have been used to deposit MoS2 thin
films to analyze their photonic properties and uniformity. The difference between
the two characteristic peaks of the Raman spectrum by one-step CVD process is
19.2cm-1
to 25.6cm-1
, which means the films are monolayer to six layers and
15mm of uniform range is bilayer. And the difference between the two
characteristic peaks of the Raman spectrum by two-step CVD process is 20.7cm1
to 23.6cm-1
, which means the films are monolayer to three layers and 750mm2
of the whole substrate is bilayer.
The element composition of the films was analyzed by X-ray photoelectron
spectrometer. The lattice of the films was analyzed by X-ray diffractometer. The
exciton transition behavior of MoS2 thin film at the k point of the Brillouin zone
was studied by using visible light spectrometer and photoluminescence
spectrometer.
The uniformity of the MoS2 thin film deposited by the one-step CVD method
is dependent on several parameters of furnace. In this research, a 3×9cm2
sapphire
substrate was placed to deposit MoS2 thin films and the uniformity of thin film
was analyzed. The uniformity of the MoS2 thin film deposited by the two-step
CVD method was independent on the quartz furnace. The uniformity of the MoS2
thin film was related the uniformity of the sputtered molybdenum thin film. In
this research, a sapphire substrate of 3×2.5cm2 was placed, and a uniform thin
film was deposited successfully. | en_US |
| DC.subject | 二硫化鉬 | zh_TW |
| DC.subject | 二維材料 | zh_TW |
| DC.subject | 均勻性 | zh_TW |
| DC.subject | 光電特性 | zh_TW |
| DC.subject | 薄膜 | zh_TW |
| DC.title | 二維材料二硫化鉬薄膜光電特性與均勻性之研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |