| dc.description.abstract | ZnO, an oxide layer structure in OMO, has emerged as a promising candidate for replacing ITO in flexible devices due to its superior flexibility. To enhance the transparency and conductivity of the structure, various metal materials were sandwiched between the top and bottom ZnO layers. Using the admittance method, the optimal metal layer and ZnO layer thickness were determined for maximum transparency. Ag, Au, and Cu were found to be the top performers, with their bulk conductivity surpassing that of other materials, making them attractive choices for enhancing the optoelectronic properties of the device.
To investigate electrical properties, methods such as doping with high valence number metals or using highly conductive Ag were employed. The impact of the interlayer structure on the overall optoelectronic and flexibility properties of the film was also explored, with the ZnO/V/ZnO multilayer structure mainly focusing on electrical properties such as resistivity, carrier concentration, and mobility. After annealing at 300˚C, the ZnO/V/ZnO multilayer structure exhibited the lowest resistivity of 3.82×10-3 Ω-cm and the highest mobility of 18 cm2/V-s, thanks to the potential well at the ZnO/ZnVxOy interface. Studies show that the potential well at the ZnO/ZnVxOy heterojunction leads to a 2DEG (two-dimensional electron gas) effect, which greatly enhances mobility.
In contrast, the ZnO/Ag/ZnO multilayer structure mainly investigated the optical properties. The admittance method was used to determine the optimal structure for light transmission, resulting in a film thickness of ZnO (45nm)/Ag (7nm)/ZnO (45nm) with an average transmittance of 93.62% in the visible light region after sputtering. Additionally, the transparency was affected by the surface morphology, thickness, refractive index (n), extinction coefficient (k), and crystal structure of the nanoscale interlayer. Taken together, these factors can account for the variations in transparency observed in real coating situations at the nanoscale. | en_US |