| dc.description.abstract | The thesis discusses the fabrication of silicon nitride waveguide microring resonator with electron-beam (e-beam) lithography. Recently, silicon nitride has been widely used for integrated photonics. In order to obtain optical functions both in linear or nonlinear applications, silicon nitride has now become an excellent photonics platform, especially in the field of nonlinear optics, such as wavelength conversion, supercontinuum generation, and frequency combs, due to its nonlinearity coefficient and large bandgap. This thesis will first discuss silicon nitride film formation for the waveguide core with both plasma-enhanced chemical vapor deposition and low-pressure chemical vapor deposition. The high quality factor obtained by these two deposition systems will be compared. Second, we will show the effect of silicon nitride thickness, buried oxide layer thickness, and the thermal annealing on the quality factor of micro-ring resonators. In the fabrication process, electron beam lithography is applied with negative photoresist Ma2405 for pattern transfer. Compared with the traditional ultraviolet lithography technology, it has better resolution down to 10 nm, while a few hundred nanometer linewidth and gap are needed for the fabrication of silicon nitride waveguides. The silicon nitride waveguide is then patterned by (anisotropic) dry etching. Finally, the high-temperature annealing will be demonstrated. By eliminating the N-H bond and reducing the inherent loss of waveguide propagation, we obtain the quality factor of 9*104 with free spectral range (FSR) ~2.0 nm and demonstrate a domestic silicon nitride micro-resonant cavity platform. In addition, preliminary data of gallium nitride waveguides will also be shown, which have the advantages of higher refractive index, nonlinear coefficient, bandwidth gap, and negligible two-photon absorption. It opens up a new path for future applications in nonlinear photonics. | en_US |