| DC 欄位 |
值 |
語言 |
| DC.contributor | 機械工程學系 | zh_TW |
| DC.creator | 羅曉涵 | zh_TW |
| DC.creator | HSIAO-HAN LO | en_US |
| dc.date.accessioned | 2021-7-7T07:39:07Z | |
| dc.date.available | 2021-7-7T07:39:07Z | |
| dc.date.issued | 2021 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=108323045 | |
| dc.contributor.department | 機械工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本論文研究了殘餘量對脈衝直流反應濺射製備氮化鋁（AlN）薄膜生長過程的影響。由於顯著的膜殘餘應力，可能會造成氮化鋁薄膜從基材破裂或剝離。因此，殘餘應力的控制對於機械穩定的氮化鋁薄膜的合成非常重要。另外，還分析了晶體的發展和殘餘應力與晶體的晶體學取向之間的關係。使用X射線衍射（X-ray diffraction, XRD），傅立葉變換紅外光譜（Fourier transform infrared spectroscopy, FTIR），透射電子顯微鏡（Transmission electron microscope, TEM）和掃描電子顯微鏡（Scanning electron microscope, SEM）來測量氮化鋁薄膜的晶體結構，厚度和殘餘應力。結果表明，氮化鋁在不同的沉積條件下具有不同的結構和應力特性。此外，在本研究中使用主成分分析（Principal Component Analysis, PCA）對原位發射光譜（Optical Emission Spectroscopy, OES）進行了分析。評估的過程參數包括脈衝直流頻率，直流功率和氣體流量比。 PC1-DEV（在第一主分量方向上的標準偏差）用於計算殘餘應力值（VRS），以準確地預測和分類沉積膜的應力狀態，即壓縮應力或拉伸應力。應用Box-Behnken實驗設計，基於響應面法（RSM）建立了數學模型，並確定了產生最小殘餘應力的最佳條件。 | zh_TW |
| dc.description.abstract | The influence of residual amount on the growth process of aluminum nitride (AlN) thin films prepared by pulsed DC reactive sputtering was studied. The AlN film may crack or peel from the substrate due to significant film residual stress. Therefore, the control of residual stress is very important for the synthesis of mechanically stable AlN films. Additionally, the relationship between the development and residual stress and the crystallographic orientation of crystals is also analyzed. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), transmission electron microscope (TEM), and Scanning Electron Microscope (SEM) were used to measure the crystal structure, thickness, and residual stress in AlN films. The results show that AlN has a different structure and stress characteristics under different deposition conditions. Besides, in-situ Optical emission spectroscopy (OES) was analyzed using principal component analysis (PCA) in this study. The process parameters evaluated included pulsed DC frequency, DC power and flow gas ratio. The PC1-DEV (standard deviation in the first principal component direction) is used to calculate the value residual stress (VRS) to accurately predict and classify the stress state of the deposited film, i.e., compression stress or tensile stress. The Box-Behnken experimental design was applied, a mathematical model was established based on the response surface method (RSM), and the optimum conditions for generating the minimum residual stress were determined. | en_US |
| DC.subject | 非對稱雙極脈衝 | zh_TW |
| DC.subject | 氮化鋁薄膜 | zh_TW |
| DC.subject | 殘留應力 | zh_TW |
| DC.subject | 大數據 | zh_TW |
| DC.subject | 原位發射光譜 | zh_TW |
| DC.subject | pulsed DC reactive sputtered | en_US |
| DC.subject | aluminum nitride | en_US |
| DC.subject | residual stress | en_US |
| DC.subject | via large-scale data | en_US |
| DC.subject | optical emission spectroscopy | en_US |
| DC.title | 非對稱雙極脈衝DC濺鍍氮化鋁薄膜之電源參數實驗設計與OES大數據輔助預測殘留應力最佳化 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Residual stress classification of pulsed DC reactive sputtered aluminum nitride via large-scale data analysis of optical emission spectroscopy | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |