| dc.description.abstract | Monocrystalline silicon is the main material used in the production of substrates for semiconductor devices. In order to achieve high quality silicon crystals with low defects in the manufacturing process, it is important to produce silicon crystals with low defects because defects are inevitable in the manufacturing process. In the Czochralski method (Cz) of single crystal silicon growth, intrinsic point defects are continuously recombined and generated at the melt/crystal interface, so the defects generated during the crystal growth process are controlled by changing the crystal rotation and pulling rate to achieve higher quality crystals. However, due to the time and material cost involved in the fabrication process, it is difficult to find the appropriate variables of crystal rotation and pulling rate, so numerical simulations are needed to observe the effect of changing the variables of crystal rotation and pulling rate on the interior of the crystal to find the appropriate process parameters.
In this study, CGSim software was used to simulate the growth of 8-inch single-crystal silicon by the CZ crystal method (CZ), in which the crystal height was grown to 500 mm to investigate the variation of oxygen concentration in the crystal under different crystal rotation and pulling speed, and to observe the effect of doping with oxygen and nitrogen on the distribution of point defects in the crystal, so as to understand the effect of different operating conditions on the defect density. It was found that the defect density in the crystals with reverse crystal rotation was lower than that in the crystals with isotropic crystal rotation, and the types of defects included vacancy-type defects and oxygen precipitates. | en_US |