dc.description.abstract | This experiment is based on the results of the previous laboratory research on the single-source thermal evaporation of perovskite light-emitting diodes, and the zinc oxide layer prepared by the solution method is replaced by the atomic layer deposition method. In comparison, the atomic layer deposition method is used.After the method and the solution method, it is confirmed that the element using the atomic layer deposition method under the same structure not only improves the defects but also has higher performance, it can be considered that the atomic layer deposition method is sufficient to replace the solution method used in the past.
Then, because the zinc oxide film deposited by the atomic layer deposition method has sufficient flatness to provide good deposition conditions for the perovskite layer, it is no longer necessary for the bottom molybdenum trioxide layer in the original structure to provide flatness conditions. After comparing the light emission of the device with or without the molybdenum trioxide layer removed, it is observed that the device with the molybdenum trioxide layer removed has the same or slightly higher brightness. After confirming that the zinc oxide layer can indeed provide sufficient flatness, it can be Remove the molybdenum trioxide layer at the bottom to save process time.Since the zinc oxide layer has the characteristics of increasing its electrical properties as the thickness increases, the thickness of zinc oxide has been studied and it is observed that zinc oxide with a thickness of 800 Cycle (about 180nm) has the best performance, and it can be considered that the thickness is below this thickness.The dense layer of titanium dioxide at the bottom of the device does not have a significant impact on the performance of the device, but after comparing the performance of the device before and after removal, it is observed that the brightness of the device after removing the dense layer of titanium dioxide has been greatly improved. So far, all the components in the process have been removed.The solution method increases the process stability.
Finally, after confirming that the CsPbBr3 active layer is sufficiently stable to withstand the corrosion of the organic solvent when the carbon electrode is scraped, we removed the molybdenum trioxide layer on the top of the device. Finally, the structure of the device is ITO/ALD -ZnO/CsPbBr3/C, the maximum brightness is 1380 cd/m2, and the emission wavelength is 527.2nm. This time, the zinc oxide deposited by atomic deposition method is used to improve the structure of the device. Finally, the structure is simplified and the process time is saved. | en_US |