| dc.description.abstract | In daily life, there are many energy generations but used as waste energy. Therefore, the thermoelectric effect is developed to convert thermal energy and electrical energy. It can be divided into power generation and refrigeration. The temperature difference can be used to generate the electric potential difference. The current flows into the thermoelectric device, causing the end of the device to absorb heat and discharge. In this thesis, we focus on generating electric power under a temperature bias. Thermoelectric energy can be regarded as a kind of green energy. In recent years people pay more and more attention to the problem of the thermoelectric effect. Use the characteristics of thermoelectric materials to convert waste heat into electrical energy to achieve higher energy efficiency. It can be used in 1. mechanical device 2. wearable devices using human body temperature difference 3.automobile waste heat generation system 4. Green energy environmentally friendly power generation system, etc. Therefore, efficient recovery of lost heat has become an important issue. Because of conversion process doesn’t involve physical and chemical changes, there will be less carbon dioxide or by-products, and the thermoelectric material has a simple structure, which can achieve the functions of thermoelectric power generation, refrigeration, and thermoelectric power generation. The advantages of thermoelectric materials are small size, low noise, long service life, safety, and environmental III protection, can achieve the effect of lightweight and small size, can replace many heating and cooling systems, and have greater development potential. The main research direction of this thesis is P-type Mg2(Si, Sn) thermoelectric materials. Testing different process parameters, powder material ratio, silicon powder doping, etc. Analyzing their thermoelectric characteristics. Finally, select the best process conditions to prepare samples and connect metal electrodes to measure the output of a single device. Among them, the resistance of the MgSiSn sample made by the best method is about 0.63mΩ, the Seebeck coefficient is 134 μV/K. The maximum output power of a single device with nickel as the metal electrode is 339 nW and copper is 1010 nW. | en_US |