博碩士論文 108521056 完整後設資料紀錄

DC 欄位 語言
DC.contributor電機工程學系zh_TW
DC.creator黃瀚緯zh_TW
DC.creatorHan-Wei Huangen_US
dc.date.accessioned2022-8-6T07:39:07Z
dc.date.available2022-8-6T07:39:07Z
dc.date.issued2022
dc.identifier.urihttp://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=108521056
dc.contributor.department電機工程學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract在本篇論文中,我們使用隨機灑點的方式產生隨機晶圓,在不同良率以及不同Diesize下生成合成晶圓,定義相似性公式在隨機灑點的合成晶圓中,不同Diesize的晶圓和相似性數值間的關聯性。 再來討論相似性門檻的分析。在相同的Diesize下,我們將相似性公式對隨機灑點產生的合成晶圓中的數據和相似性公式對真實晶圓所產生的數據進行比較,選擇實驗的對象為台積電所提供的WM-811K晶圓資料庫,定義在同一批次的晶圓圖在相似性公式判定以及其相似性門檻數值與其晶圓Diesize之間的相關性分析。 最後討論相似性門檻在真實晶圓圖上分析應用的部分,選擇實驗的對象為真實晶圓中錯誤樣態分析,我們所使用的真實晶圓為台積電所提供的WM-811K晶圓資料庫,透過相似性門檻將其分成數群,找出每一群具有的特徵及關連,其中的錯誤樣態可分為以下九類,Center、Donut、Scratch、Edge-Ring、Edge-Loc、Loc、Near-Full、Random、None。 通過相似性門檻的分析方法,運用了相似性公式來判斷合成晶圓以及真實晶圓的錯誤樣態關聯,將合成晶圓的數據調整並應用於真實晶圓中,從而瞭解其特性,最後可以判斷該產品具有什麽特徵。zh_TW
dc.description.abstractIn this paper, we generate random wafers by poisson yield model, generate synthetic wafers with different yields and different Diesize, and define the similarity formula. and the correlation between the similarity values. Second discuss the analysis of similarity threshold. Under the same Diesize, we compare the data generated by the similarity formula on the synthetic wafers generated by poisson yield model with the data generated by the similarity formula on the real wafers, and the selected experimental object is the WM-811K provided by TSMC. Wafer database, define the correlation analysis between the similarity formula determination and the similarity threshold value of the wafer images in the same batch and their wafer Diesize. Finally, the analysis and application of the similarity threshold on the real wafer map is discussed. The object of the experiment is the error state analysis in the real wafer. The real wafer we use is the WM-811K wafer database provided by TSMC. Divide it into several groups through the similarity threshold, find out the characteristics and connections of each group, and the error patterns can be divided into the following nine categories, Center, Donut, Scratch, Edge-Ring, Edge-Loc, Loc, Near- Full, Random, None. Through the analysis method of the similarity threshold, the similarity formula is used to judge the wrong state association between the synthetic wafer and the real wafer, and the data of the synthetic wafer is adjusted and applied to the real wafer, so as to understand its characteristics, and finally can Determine what features the product has.en_US
DC.subject晶圓圖zh_TW
DC.subject錯誤樣態zh_TW
DC.subject相似性分析zh_TW
DC.subject標準差zh_TW
DC.subjectwafer mapen_US
DC.subjecterror patternen_US
DC.subjectsimilarity analysisen_US
DC.subjectstandard deviationen_US
DC.title在實際晶圓圖中應用相似性門檻值於批次分析zh_TW
dc.language.isozh-TWzh-TW
DC.titleApplication of Similarity Threshold for Lot Analysis to Real-world Wafer Mapsen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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