| dc.description.abstract | Nowadays, smart phones and mobile devices are widely used, and people are pursuing more and more high-performance electronic products. Although the power consumption requirements of electronic products have increased significantly, the progress of traditional lithium
batteries has not been able to keep up. People gradually shift their target from large-capacity batteries to high-power chargers. Traditional high power chargers are large in size and not easy to carry around. However, GaN relies on the characteristics of high power density to greatly reduce
the volume of fast charging after being made into power components.Gallium nitride (GaN) has a higher operating frequency than traditional silicon (Si) devices. The switching frequency limit of silicon devices is about 65~95kHz. Even higher frequencies will cause component loss and unnecessary energy consumption. However, the components made of gallium nitride still have good performance and high stability at high frequencies. The high-density power characteristics can reduce the size of peripheral components, which is consistent with the characteristics
required for high density of future 5G base stations.
This paper is aimed at high-voltage half-bridge driving, and uses a novel circuit architecture on the high-potential side, which can reduce the complexity of the circuit. Generally, traditional high-voltage half-bridge
drives often require additional level shifting circuits, and use the architecture of this article. Later, the level shift design can be omitted, making the circuit more streamlined.
Using an input voltage of 40V, operating frequency of 1M Hz, duty cycle of 45%, applied to a step-down converter, the output voltage is 18V, the output power is about 33W, and the efficiency is 90%. | en_US |