dc.description.abstract | This thesis mainly studies microwave and millimeter-wave watt-level switches and an X-band quadrature phase-locked loop (QPLL). The Switches are an important part of the wireless radio frequency (RF) transceiver system. Due to the fifth-generation dynamic communication (5G), the frequency is getting higher, and the greater transmission loss. Power Amplifiers (PA) have become popular research at this stage, but there are few watt-level high-power switches to undertake power amplifiers and antennas. Chapter two and chapter three of this thesis focus on boosting the power-handling of the switches. At the same time, the advantages including wide band and high-speed of the fifth-generation dynamic communication have also emerged. Among them, the local oscillator (LO) is very important as the role of upconvert and downconvert in the system. Chapter four focuses on the low power consumption and low phase noise quadrature phase-locked loop.
The first chapter is the introduction of the thesis. In chapter two, six chips of 5 and 28 GHz single-pole single-throw (SPST) and single-pole double-throw (SPDT) switches series-shunt switches and four chips of 1/4λ transmission line shunt switches using 0.15-μm GaAs-PIN diode process provided by WIN Semiconductors corporation. As the input signal power increase, the diodes will be turned on and the insertion loss will also increase. This thesis proposes the Anti-Series diode structure, to suppress the diode conduction by the Anti-diode feature. Thereby improving the power handling of the switches. Due to the parasitic inductance of the back-via in GaAs, this chapter proposes the resonance-capacitance structure to eliminate this parasitic effect. The isolation of the switches can be improved without affecting the other performance of the switches. This chapter compares various proposed structure switches with conventional switches and successfully implements high-power low-loss high-isolation switches. With insertion loss less than 1 dB, IP1dB greater than 35 dBm, and isolation greater than 27.4 dB.
The third chapter is the design of traveling-wave switches, which uses passive components to be equivalent to the transmission line. To reduce the area and retain the characteristics of transmission lines, and achieve the characteristics of high-frequency bandwidth and low insertion loss. This chapter uses TSMC 0.18 μm CMOS, WIN 0.15 μm GaN, and WIN 0.15 μm GaAs PIN-diode processes to implement a total of 12 traveling-wave switches of various structures for comparison. The switch structures include conventional, drain-gate diode-connection, drain-source diode-connection, anti-series diode, resonance-capacitance, and resonance-capacitance anti-series diode. Compare with conventional and various proposed structures of traveling-wave switches, and successfully implements high-power switches. With insertion loss less than 1.7 dB, IP1dB greater than 35 dBm, and isolation greater than 18.8 dB.
In chapter four, design of an X-band quadrature phase-locked loop using TSMC 0.18 μm CMOS. The phase-locked loop includes a transformer-coupled voltage-controlled oscillator (VCO), a phase and frequency detector (PFD), a charge pump (CP), a loop low-pass filter (LPF), two-stage of current mode logic (CML), and four-stage of true single-phase clocking divider (TSPC). Due to the loop being unstable, an external filter is required. The transformer-coupled voltage-controlled oscillator covered from 9.33 GHz to 10.1 GHz, output power has -4 dBm. The quadrature phase-locked loop covered from 9.44 GHz to 9.48 GHz, achieving -105.1 dBc-Hz phase noise at 1 MHz, and the power consumption is 39.8 mW.
In the final chapter, conclusions and future works are presented. | en_US |