博碩士論文 109222016 完整後設資料紀錄

DC 欄位 語言
DC.contributor物理學系zh_TW
DC.creator陳俊諺zh_TW
DC.creatorChun-Yen Chenen_US
dc.date.accessioned2022-9-8T07:39:07Z
dc.date.available2022-9-8T07:39:07Z
dc.date.issued2022
dc.identifier.urihttp://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=109222016
dc.contributor.department物理學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract我們研究了具有雙極電阻開關特性的超薄氧化鋁磁穿隧接面中的低頻雜訊。 從隨機電報雜訊對偏壓的關係,揭示了在高與低電阻狀態下瞬間傳輸動態(電子被捕獲或釋放)的檢測,當調控鐵磁金屬之費米能級靠近AlO$_x$ 的缺陷態時,偵測到這兩種電阻態具有不同的局部缺陷能量與位置。同時實驗的結果也藉由緊束縛近似模型與JunPy程序得到很好的三種電阻狀態的模擬關係。研究結果表明,此缺陷可視為帶正電的氧空缺,因此會受到負向電場的吸引,導致 AlO$_x$ 中氧空位遷移,而達到高與低電阻狀態的切換。簡而言之,我們透過雜訊確認了磁穿隧接面中具電阻切換行為的傳輸機制。zh_TW
dc.description.abstractWe study the low-frequency noise in the ultrathin (1.5 nm) AlOx based magnetic tunnel junction (MTJ) with bipolar resistive switching (RS). From the bias dependence of random telegraph noise (RTN) analysis, we reveal the instant detection of the charge dynamics transport (such as capture and emission event) in the high (HRS) and low resistance states (LRS), they exhibit different localized trap energy and location. We also use the tight-binding model by the JunPy package to confirm the noise information, we found that the simulation I-V curve also has the behavior of RS states. The results show that the oxygen vacancy with a positive charge could be attracted by the polarity of the electric field, resulting in the migration of oxygen vacancy in the AlOx. In short, we study the charge transport of RS in the MTJ by noise analysis.en_US
DC.subject磁性穿隧接面zh_TW
DC.subject雙極電阻開關zh_TW
DC.subject氧空缺遷移zh_TW
DC.subject低頻雜訊zh_TW
DC.subject隨機電報 雜訊zh_TW
DC.subject緊束縛近似模型zh_TW
DC.subjectmagnetic tunnel junctionen_US
DC.subjectbipolar resistive switchingen_US
DC.subjectoxygen vacancy migrationen_US
DC.subjectlow-frequency noiseen_US
DC.subjectrandom telegraph noiseen_US
DC.subjecttight-binding modelen_US
DC.title具電阻切換行為之氧化鋁磁性穿隧接面中低頻雜訊與傳輸機制研究zh_TW
dc.language.isozh-TWzh-TW
DC.titleLow-frequency Noise and Charge Transport in AlOx Magnetic Tunnel Junction with Resistive Switchingen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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