| dc.description.abstract | As the transistor size shrinking, it is more difficult to follow Moore’s Law. Therefore, the research on two-dimensional materials is gradually emerging to break the physical limit and replace traditional semiconductor materials such as silicon. In this paper, the large area two dimension molybdenum disulfide (MoS2) was grown at low temperature, become one for the choices of next generation semiconductor materials.
The low-pressure chemical vapor deposition method (LPCVD) was applied to grow MoS2 thin films on sapphire substrates .The growth temperature is reduced by using the seeding promoters. The △k of the measured Raman shifting is below 21cm-1, which confirmed that the MoS2 was a monolayer. PL and absorption spectrum measurements confirmed that the MoS2 is a direct bandgap material. The monolayer thickness was 0.750nm measured by AFM, and the interlayer spacing was 0.650nm measured by HR-TEM. The MoS2 film was transferred to the SiO2/Si substrate, and the XPS measurement showed the results were without the signal of the seeding promoter. Due to the water-soluble layer produced by the seeding promoter the process growth, It is helpful for the transfer process, but also affects the long-term storage of the MoS2 films. After the reliability test, it is found that the life-time of the transferred MoS2 films is greatly improved, and the storage time can be preserved up to 14 days. In the electrical measurement of the MoS2 device, Ion/Ioff is about 107, the subthreshold swing is about 95 mV/decade and the mobility is about 5 cm2/Vs.
Finally, the MoS2 films grown with seeding promoters can achieve high quality, large area, good uniformity and monolayer structure, and can be effectively preserved when transferred to SiO2/Si substrate for electronic and optoelectronic applications. | en_US |