| dc.description.abstract | In recent years, amorphous oxide semiconductor (AOS) has been applied to the channel layer of thin film transistor (TFT). Compared with amorphous silicon (a-Si) and low temperature poly silicon (LTPS), AOS has the advantages of high mobility, low leakage current, uniformity, suitability, and in low-temperature processes. Among them, IGZO is worthy of attention in AOS. In the beginning, IGZO has been applied for transparent conductive oxide (TCO) with high transmittance and high conductivity, which is a commercially valuable material.
This research is divided into two parts, the influence of IGZO thin film process and the fabrication of IGZO on flexible substrates, respectively. A high power pulsed magnetron sputtering (HiPIMS) has been applied to fabricate IGZO and achieved high density, adhesion and under low temperature process on flexible substrates. We used HALL measurement to analyze the electrical properties of the films and found when the negative substrate bias was applied in the process, the electrical properties of the films can be improved and a few oxygen can also improve the mobility. Then, we used HiPIMS to fabricate IGZO on flexible substrates and bending tests, to measure tensile stress and compressive stress under different bending diameters. Comparing the electrical properties under different bending diameters, we can found the larger the diameter, the smaller the effect on the films. The tensile stress has only small influence for the films. Finally, it shows the IGZO has been fabricated on the flexible substrates successfully and the bending test shows the influence of the compressive stress is higher than tensile stress. | en_US |