| dc.description.abstract | Since the main carriers of N-type silicon are electrons, and the drift rate is three times that of holes after applying an electric field, it is very suitable for the fabrication of silicon photonic devices after anodizing to produce quantum-confined nanostructures. However, due to the lack of anodes on N-type silicon substrates The element of oxidation—holes, is difficult to make porous silicon. Therefore, the hydrophobic wafer bonding technology uses the P-type silicon as the intermediate electrode. The detachable PN junction is formed on the back of the N-type silicon, and then the electrode is connected. This will convert the holes in the N-type silicon to flow into the main control current, improve the efficiency of anodization on the substrate surface, and the P-type silicon as an intermediary electrode can be easily removed after the process, keeping the processed N-type silicon clean and free of contamination.
In this study, electrochemical etching was performed at a fixed current of 500 mA for 30 min using a hydrofluoric acid: alcohol ratio of 1:1, and field emission scanning electron microscopy (SEM), transmission electron microscopy (TEM), photoluminescence spectrometer (PL) For further analysis, P-type silicon wafers with different doping concentrations were used to assist N-type silicon wafers for etching, and the effect of porous silicon generated by N-type silicon wafers was subsequently observed. | en_US |