| DC 欄位 |
值 |
語言 |
| DC.contributor | 機械工程學系 | zh_TW |
| DC.creator | 簡伯諺 | zh_TW |
| DC.creator | Po-Yen Chien | en_US |
| dc.date.accessioned | 2021-6-21T07:39:07Z | |
| dc.date.available | 2021-6-21T07:39:07Z | |
| dc.date.issued | 2021 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=109323064 | |
| dc.contributor.department | 機械工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本研究將針對氫氟酸電化學蝕刻產生石墨烯奈米顆粒之機制進行探討。以氫氟酸及酒精1:1之比例電化學減薄碳化矽晶圓的過程中我們意外發現了溶液中有光致發光的現象，經過儀器量測後發現有氟化石墨烯奈米顆粒的產生。
同時我們比較氫氧化鉀以及鹽酸蝕刻碳化矽基板後之溶液情形，發現以氫氟酸蝕刻後所生成之石墨烯奈米顆粒的濃度最高。我們以化學鍵能之差異所導致之選擇性蝕刻(Selective etching)之理論解釋此系統機制。
相較於傳統所得到氟化石墨烯奈米顆粒製程，本實驗以所得到之氟化石墨烯奈米顆粒利用XPS所量測的氟化比例非常高，極有潛力應用至能源、醫療、以及光學領域當中。
此機制之特點為我們不僅能夠利用電化學蝕刻快速減薄碳化矽，且蝕刻後之蝕刻液能夠經由萃取產生可使用之氟化石墨烯奈米顆粒，顯示我們可以從單一製程獲得雙重產物，進而實現綠色化學製程。同時我們認為此機制能夠進一步的應用至工業製程中。 | zh_TW |
| dc.description.abstract | In the study, we discuss the mechanism of graphene nanoparticles fabricated from Hydrofluoric acid etching Silicon carbide by electrochemical process. Using the solution of Hydrofluoric acid and Ethanol with 1:1 volume percentage to etch Silicon Carbide substrate, we accidentally found out that the etchant shown the phenomenon of Photoluminescence after the process. With a series of detection, we discover that the etchant consist of fluorinated graphene nanoparticles.
We also applied KOH and HCl as etchant to the system. By comparison, using HF as etchant shows higher concentration of graphene nanoparticles. We explain the mechanism of the phenomenon by selective etching.
Compare to conventional fluorinated process, the graphene nanoparticles in our experiment has a higher fluorinated rate, which indicates a promising application in various fields, such as energy, medical, and optical field.
The value of the experiment is that not only the electrochemical process can thinning the SiC substrate, but the etchant is also applicable after extraction. Which shows that the process meets the standard of green chemistry, and the process is also multi-function. We look forward to introduce the process to the real approach. | en_US |
| DC.subject | 碳化矽 | zh_TW |
| DC.subject | 石墨烯 | zh_TW |
| DC.subject | 電化學蝕刻 | zh_TW |
| DC.subject | 奈米顆粒 | zh_TW |
| DC.subject | 選擇性蝕刻 | zh_TW |
| DC.subject | Silicon Carbide | en_US |
| DC.subject | Graphene | en_US |
| DC.subject | Electrochemical etching | en_US |
| DC.subject | Nano particle | en_US |
| DC.subject | Nelective etching | en_US |
| DC.title | 氫氟酸電化學蝕刻碳化矽生成石墨烯奈米顆粒之機制探討 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Study of the Mechanism of Electrochemical etching process of Silicon Carbide using Hydrofluoric Acid | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |