| dc.description.abstract | In recent years, with the development of charging systems, Volkswagen has begun to pursue high-efficiency and fast products. From low-power 3C products to high-power applications required by electric vehicles, the industry is continuously developing. Power components equipped with third-generation wide-bandgap semiconductor processes, such as silicon carbide (SiC) and gallium nitride (GaN), have higher electron speed and electron density than traditional silicon (Si) processes. In addition to being used in high-frequency and high-voltage products, the product volume can also achieve a lightweight effect, and its characteristics are an important indicator for the future development of chargers.
This paper introduces a zero-voltage switching resonant architecture applied to a buck converter. In order to effectively reduce the switching loss of the circuit switch, an LC series resonant circuit is added to the power switch to achieve the phase difference effect between the voltage and current of the switch, avoiding the two The wave pattern overlaps, which overcomes the loss of traditional hard switching, realizes soft switching technology to improve switching conditions, reduces switching loss and switching noise, and improves overall circuit efficiency.
Two kinds of wide-bandgap semiconductor components, silicon carbide and gallium nitride, respectively, were stepped down from 200V to 100V, and the efficiency was 89% and 92.5%, respectively, and the output current was 1A. In the experiment of reducing the voltage from 200V to 50V, when the GaN transistor is subjected to a high voltage of 830V, the efficiency is 86.3%, and the output current is 2.25A. | en_US |