| dc.description.abstract | Photodetectors are optoelectronic devices that convert incident light energy into electrical signals. It has many important applications, including imaging, optical communication, remote control, chemical/biological sensing, etc. At present, GaN, Si and InGaAs photodetectors are the main commercial product materials.
In recent years, the research of perovskite, a new material for optoelectronic devices, has been on the rise because of its excellent light absorption characteristics, high carrier mobility, and large light absorption coefficient. In addition, the adjustable energy gap characteristics has great potential to become a new type of wide-bandgap light sensing element. Among them, all-inorganic perovskite is obviously superior to organic-inorganic hybrid perovskite regardless of its performance and weather resistance, so all-inorganic perovskite is used to prepare photodetectors.
In this study, the all-inorganic perovskite material CsPbBr3 was selected, and the active layer was prepared by thermal evaporation, which not only has high film density, but also has high flatness. The quality of the active layer is improved by high-pressure assisted thermal annealing, which reduces the film defects and has fewer grain boundaries. In addition, TiO2 is added as an electron transport layer, which can further increase the charge extraction efficiency. After research, it is found that its on/off ratio reaches 1.42×104, and its high open circuit voltage of 1.02 V can be used as a self-powered photodetector. And in the general office environment (illuminance 420 lux), the on/off ratio still has a certain degree of response effect. This is expected to become a low-cost, high-performance photodetector device. If this component is combined with current amplification and other circuit designs in the future, it is believed to be beneficial to the development of light sensing applications in daily life. | en_US |