| dc.description.abstract | In this paper, we use the 90-nm CMOS process to design an asymmetric T/R switch and a medium power ampli er, we also use the 0.18-m
CMOS process to implement a traveling wave switch for the Ka band.
In the second chapter of this paper, we design a traveling wave
switch for the Ka band with an operating frequency range of 26.5 GHz
to 40 GHz.This circuit utilizes the concept of a traveling wave to achieve
wideband switch.By combining inductive transmission lines and o-state
transistor, an arti cial transmission line is formed.The measurement
results show that within the operating frequency range of 26.5 to 40
GHz, the insertion loss is less than 3.17 dB, the return loss is greater
than 9.1 dB, and the isolation is greater than 28.4 dB.
In Chapter 3, we design a asymmetric T/R switch operation in the
37 GHz to 44 GHz frequency range. The architecture is primarily based
on a Π-network- lter structure.In the operating frequency range of 37-
44 GHz, the insertion loss of the TX mode is less than 1.56 dB, The
return loss is greater than 11.1 dB in TX mode and greater than 11.9
dB in RX mode.The isolation is greater than 24.6 dB and 16.3 dB in
TX and RX modes, respectively.At 40 GHz, the simulated large-signal
IP1dB is measured to be 40.4 dBm.
In Chapter 4, we propose a medium power ampli er using capacitance neutralization technique for the 5G millimeter-wave. The operating frequency range is designed from 37 GHz to 43.5 GHz. The
circuit utilizes transformers to achieve single-ended to dierential conII
version.By selecting neutralization capacitors and circuit CG-stage gate
capacitor, the circuit achieves optimal stable stability and maximum
available gain.The measurement results show a gain greater than 10.6
dB, input return loss greater than 8.7 dB, output return loss greater
than 2.8 dB. The output return loss exhibits a noticeable trend towards
lower frequencies. At 40 GHz, the PAE of OP1dB and OP1dB are 12.4
dBm and 7.9%. | en_US |