| DC 欄位 |
值 |
語言 |
| DC.contributor | 物理學系 | zh_TW |
| DC.creator | 敦俊儒 | zh_TW |
| DC.creator | Jun-Ru Dun | en_US |
| dc.date.accessioned | 2001-7-9T07:39:07Z | |
| dc.date.available | 2001-7-9T07:39:07Z | |
| dc.date.issued | 2001 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN= 88222005 | |
| dc.contributor.department | 物理學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | II
electrical properties transformed from p-type to n-type when the sample are annealed at the temperature higher than 850 oC and transformed to n+-type (n=-1X1019~-4X1019cm-3) when the temperature higher than 950 oC. When the annealing temperature is higher than 950 oC, the implanted samples have a factor of 100 times more free electrons than the samples annealed at the temperature lower than 850 oC. | en_US |
| DC.title | 離子佈植摻雜氮化鎵薄膜的光、電、結構特性之分析 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Optical, Electrical, and Structure Analysis of Ion-implanted GaN | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |