|DC.description||National Central University||en_US|
|dc.description.abstract||In this thesis, the 1x4 Si metal-semiconductor-metal photodetector (MSM-PD) array with self-aligned trench-electrodes had been fabricated on a  p-type silicon wafer successfully. Self-alignment technique was used to reduce the needed mask levels and form a better alignment between metal and amorphous Si films.
The obtained device had the higher responsivity and faster response speed than those of conventional planar Si MSM-PDs with non-self-aligned trench-electrodes. The responsivity of the device with self-aligned trench-electrodes was 0.30 A/W, which was higher than that (0.15 A/W) of the conventional planar one having no trench. The device knee voltage was decreased from 5 V to less than 1 V by using self-aligned trench-electrodes, and the FWHM (full width at half maximum) of temporal response was reduced from 66.6 ps to 56.0 ps. This would be due to the self-aligned trench-electrodes resulting in a more uniform lateral electric field in the light absorption region of device.
Cross-talks among channels were not obvious because of the employed properly recessed isolation lanes. Different finger spacings and widths of interdigitated electrodes resulted in different responsivities of the MSM-PDs. The narrower the finger spacings and widths, the higher the device responsivity due to the larger device effective active area.
The obtained 1x4 Si MSM-PD array with self-aligned trench-electrodes had good characteristics and could easily be integrated with Si OEIC (Opto-Electronic IC). It was expected that the MSM-PD array would be used in optical fiber communication system.||en_US|
|DC.subject|| trench electrodes||en_US|
|DC.title||Characteristics of 1x4 Si MSM-PD Array With Self-Aligned Trench Electrodes ||en_US|
|DC.publisher||National Central University||en_US|