| DC 欄位 |
值 |
語言 |
| DC.contributor | 物理學系 | zh_TW |
| DC.creator | 張翔思 | zh_TW |
| DC.creator | Hsiang-Si Chang | en_US |
| dc.date.accessioned | 2002-6-19T07:39:07Z | |
| dc.date.available | 2002-6-19T07:39:07Z | |
| dc.date.issued | 2002 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=89222007 | |
| dc.contributor.department | 物理學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本文主旨在於利用調制反射光譜分析厚度分別為150 nm與500 nm的硒化鋅磊晶層與砷化鎵基板之間的晶格所發生的情形。
就厚度150 nm的硒化鋅磊晶層而言，我們發現其在光譜中出現了輕、重電洞的躍遷訊號，藉著比較光調制反射光譜與壓電調制反射光譜的輕、重電洞躍遷訊號，我們可以推論出厚度150 nm的硒化鋅磊晶層受到晶格不匹配造成的壓縮應力，而且晶格並未因應力過大而產生錯位以釋放過多的應力。
就厚度500 nm的硒化鋅磊晶層而言，我們發現其在光譜中不但出現了因晶格不匹配所受到壓縮應力造成的輕、重電洞躍遷訊號，還出現了因硒化鋅與砷化鎵之熱膨脹係數不同造成的擴張應力的輕、重電洞躍遷訊號，在此我們提出一個晶格模型解釋這個現象，並從變溫光譜得到佐證。 | zh_TW |
| dc.description.abstract | We use modulation spectrum to study the ZnSe epilayer with two thickness(150 nm and 500 nm)
When ZnSe thickness is 150 nm,we find that it is pseudomophic growth. When ZnSe thickness is 500 nm,we find that it should be pseudomophic at ZnSe/GaAs interface,and it should be relaxed at ZnSe surface. | en_US |
| DC.subject | 硒化鋅 | zh_TW |
| DC.subject | 應力 | zh_TW |
| DC.subject | 調制光譜 | zh_TW |
| DC.subject | ZnSe | en_US |
| DC.subject | strain | en_US |
| DC.subject | modulation spectrum | en_US |
| DC.title | 硒化鋅磊晶層之光學性質 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | The optical property of ZnSe epilayer | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |