| DC 欄位 |
值 |
語言 |
| DC.contributor | 物理學系 | zh_TW |
| DC.creator | 曾國偉 | zh_TW |
| DC.creator | Kuo-Uei Tseng | en_US |
| dc.date.accessioned | 2002-6-21T07:39:07Z | |
| dc.date.available | 2002-6-21T07:39:07Z | |
| dc.date.issued | 2002 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=89222008 | |
| dc.contributor.department | 物理學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本篇論文主要是針對氮化銦鎵卅氮化鎵多層量子井發光二極體（In0.23Ga0.77N/GaN MQWs LED）的結構以電容電壓量測與導納量測探討其電性。
在本研究中，主要是利用電容電壓量測檢測多層量子井中的載子分佈情形。並分析在不同溫度與量測頻率的條件下，載子凍結與樣品所含的缺陷對於電容電壓量測之影響。另外，利用空乏近似法的計算來模擬電容電壓譜線，並探討在氮化銦鎵卅氮化鎵異質結構中所產生的壓電場效應，對於多層量子井的能帶結構與載子分佈所帶來的影響。
而由導納量測的結果發現，樣品中含有來自於n型摻雜的矽（Si）、p型摻雜的鎂（Mg）和一個可能與氮空缺（N-vacancy）有關的缺陷。 | zh_TW |
| dc.description.abstract | We use capacitance-voltage measurement and admittance spectroscopy to study the electrical properties of InGaN/GaN MQWs LED.
We use C-V measurement to study the carrier distribution of MQWs. And we analyze the influence of the carrier freeze-out and defect on the different temperature and frequency C-V measurement. Besides, we study the influence of piezoelectric field on the band profile and carrier distribution of MQWs by depletion approximation.
Then we found the n type dopant (Si), the p type dopant (Mg), and the defect N-vacancy related with admittance measurement. | en_US |
| DC.subject | 氮化銦鎵卅氮化鎵 | zh_TW |
| DC.subject | 多層量子井 | zh_TW |
| DC.subject | 電容電壓量測 | zh_TW |
| DC.subject | MQW | en_US |
| DC.subject | C-V | en_US |
| DC.subject | InGaN/GaN | en_US |
| DC.title | 氮化銦鎵卅氮化鎵多層量子井發光二極體之電性研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | The electrical properties of InGaN/GaN MQWs LED | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |