博碩士論文 89222015 完整後設資料紀錄

DC 欄位 語言
DC.contributor物理學系zh_TW
DC.creator王御蓁zh_TW
DC.creatorYu-Chen Wangen_US
dc.date.accessioned2002-7-17T07:39:07Z
dc.date.available2002-7-17T07:39:07Z
dc.date.issued2002
dc.identifier.urihttp://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=89222015
dc.contributor.department物理學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract摘要 受力於電磁場下的肥皂膜,其能量主要耗散於與空氣 分子的作用以及流體內部的黏滯力。此論文說明如何 透過實驗找出空氣阻力與黏滯力之間的比值。驅動一 穩定電流通過磁場下的薄膜,使薄膜上的流場達到穩 定狀態。利用追蹤薄膜上的微粒,測得穩定流場的旋 轉週期。再以不同頻率垂直震盪薄膜,使之達到穩定 駐波,並取得此時的共振頻率以供推算薄膜厚度。從 膜的厚度與旋賺週期的關係可知越厚的膜,阻力係數 越大,使得旋轉週期越長。由於空氣阻力始終存在, 若膜的厚度趨於零,則旋轉週期必定是正值。我們由 此一關係可得到空氣阻力與黏滯力的比值並由每一張 膜的厚度值所決定。zh_TW
dc.description.abstractAbstract We study energy dissipation rates on soap lms driven by electromagnetic forces. The relative amplitude between air- uid friction and uid viscosity has been determined. The ow eld in the soap lm is maintained in steady state by driven a steady current across the soap lm. Therefore, the energy dissipation rates must exactly balance the energy injection rate. In experimental process, rotational periods are obtained by particle tracking, and the thickness of the soap lm are measured by resonant frequency. These results are used to calculated the e ect of air friction and uid’’s viscosity. When the lm is thicker, the uid’’s drag is greater, leading to longer rotating period. When the lm thickness tends to zero, the rotating period must be a positive value, due to the air friction. As a result, we can obtain the ratio of the two energy dissipation rates. This ratio suggests that the e ect of air friction is greater as the lm is thinner. However, in conclusion our results show that the most part of energy dissipation is due to the uid’’s viscosity.en_US
DC.subject空氣阻力zh_TW
DC.subject肥皂膜zh_TW
DC.subjectair dragen_US
DC.subjectsoap filmen_US
DC.title肥皂膜上的能量耗散zh_TW
dc.language.isozh-TWzh-TW
DC.titleEnergy dissipation in soap filmen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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