| DC 欄位 |
值 |
語言 |
| DC.contributor | 機械工程學系 | zh_TW |
| DC.creator | 蕭文助 | zh_TW |
| DC.creator | Wen-Chu Hsiao | en_US |
| dc.date.accessioned | 2002-7-27T07:39:07Z | |
| dc.date.available | 2002-7-27T07:39:07Z | |
| dc.date.issued | 2002 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=89323047 | |
| dc.contributor.department | 機械工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本研究在探討銦、錫金屬、合金及其氧化物的電化學拋光行為。利用動態陽極極化行為的掃瞄及探討，找出不同系統中合適的拋光條件，而陽極定電位實驗則是用來驗證結果。金屬和合金電化學拋光的觀念應用在金屬氧化膜的系統，如ITO (銦錫氧化物)薄膜電化學拋光的可行性評估 。
由金屬銦的電化學拋光結果顯示，含有G2和S2代號成分為合適的溶液配方。成分代號G用來調整溶液的黏滯性，成分代號S則是作為鈍化劑(passivator)及參雜劑(contaminant)。鈍化劑可促進鈍化膜的生成，但參雜劑(contaminant)則破壞鈍化膜。鈍化及破壞氧化膜兩種機制的協調所引起的電解拋光而造成平滑及光亮的表面。
含有這種系列成分的溶液在銦錫氧化膜（ITO）的電解拋光應用上是可行的，其表面粗糙度（Rmax）可由拋光前的16nm降低為拋光後的9nm。 | zh_TW |
| dc.description.abstract | In this thesis, electrochemical polishing of In, Sn and 90.5In-9.5Sn alloy was explored. Anodic potentiodynamic polarization was used to screen the adequate conditions for various polishing systems. Anodic potentiostatic method was applied to confirm the electropolishing results. The concept of electrochemical polishing on metals and alloys was applied to metal oxide systems, such as ITO (indium-tin oxide) system to estimate the feasibility of electrochemical polishing.
Results from electropolishing of metallic indium showed that, the solution containing component G2 and S2 is a suitable electrolyte. The component G is for adjusting the viscosity of electrolyte and the component S acts either as a passive reagent or a contaminant reagent. Passive reagent provides a passive film but contaminate reagent breaks-down the oxide film. The compromise of passivation and oxide-broken down gives rise to electropoishing thereby leading to a smooth and bright surface.
The application of electropolishing to indium tin oxide (ITO) film in the solution containing a series of GS1010 is successfully. The maximum roughness for the ITO film prior to electropolishing is 16 nm, but diminished to 9 nm after electropolishing. | en_US |
| DC.subject | 銦錫氧化膜 | zh_TW |
| DC.subject | 電解拋光 | zh_TW |
| DC.subject | 表面粗糙度 | zh_TW |
| DC.subject | surface roughness | en_US |
| DC.subject | electropolishing | en_US |
| DC.subject | indium tin oxide | en_US |
| DC.title | 銦、錫金屬、合金與其氧化物的陽極拋光行為探討 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | On the Electrochemical Polishing of In, Sn, In-Sn Alloy and Their Oxides. | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |