| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 葉宗容 | zh_TW |
| DC.creator | Tsung-Jung Yeh | en_US |
| dc.date.accessioned | 2003-7-17T07:39:07Z | |
| dc.date.available | 2003-7-17T07:39:07Z | |
| dc.date.issued | 2003 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=90521036 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 摘要
本論文首先分析Ti/Au閘極金屬的DCFET在經過高溫製程後在直流、高頻與功率方面的特性改變，更提出閘極的金屬擴散模型，以解釋元件特性的改變。接著藉由WSix作為閘極的擴散阻隔層(diffusion barrier layer)，我們去分析它及時升溫的直流、高頻、小訊號參數、功率以及延遲時間的特性，最後再輔以可靠度的分析，來比較以WSix為閘極擴散阻隔層的元件與以Ti/Au為閘極金屬的元件之熱穩定度。
在微波射頻開關上，我們首先介紹所選擇的串並接單埠單通(SPST)射頻開關，以及其工作原理。藉由高低三分貝頻的分析，我們更可以決定微波射頻開關元件的尺寸大小，爲開關的阻隔特性作一最佳的匹配，將來以應用在微波射頻收發模組上。 | zh_TW |
| dc.description.abstract | In this paper we first analyze the DC, RF and power characteristics vibration of DCFET after high temperature process, and demostrate the gate metal diffusion model to explain the changing performance.Then we use WSi for diffusion barrier of gate metal and analyze thier performances at different temperature.Finally, we compare the thermal stability of Ti/Au and WSi/Ti/Au gate.
At the part of RF switch, first we introduce the application of RF switch and thier operation theorem. We can optimize the characteristic of isolation by choosing the dimension of switch devices for RF Tx/Rx module. | en_US |
| DC.subject | 矽化鎢 | zh_TW |
| DC.subject | 電晶體 | zh_TW |
| DC.subject | 熱穩定度 | zh_TW |
| DC.subject | 可靠度 | zh_TW |
| DC.subject | WSi | en_US |
| DC.subject | Transistor | en_US |
| DC.subject | thermal stability | en_US |
| DC.subject | reliability | en_US |
| DC.title | 矽化鎢應用於閘極金屬對元件熱穩定度以及微波射頻開關之製作與研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | The thermal stability of WSi/Ti/Au gate and RF switch | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |