博碩士論文 90521040 完整後設資料紀錄

DC 欄位 語言
DC.contributor電機工程學系zh_TW
DC.creator黃朝新zh_TW
DC.creatorChau-Hsin Huangen_US
dc.date.accessioned2003-6-20T07:39:07Z
dc.date.available2003-6-20T07:39:07Z
dc.date.issued2003
dc.identifier.urihttp://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=90521040
dc.contributor.department電機工程學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract本論文主要以階層化不完全LU法(L-ILU method)的稀疏矩陣解法器配合分離法(decoupled method)而建立一套三度空間的半導體元件模擬器。為了印證所開發元件模擬器的正確性,我們將使用Medici和Davinci軟體來印證。而在元件應用上,我們使用三度空間的元件模擬器來模擬真實的SOI元件,並使用body-tied的等效方式來使SOI元件能更穩定的操作。並且,我們也利用SOI DTMOS和在SOI元件上使用不同的閘極結構來使SOI元件能達到低功率和高效率的特性。其間,為了節省記憶體空間,我們也開發了一套能近似三度空間特性的二維等效模擬軟體。zh_TW
dc.description.abstractIn this thesis, we use the Levelized Incomplete LU method and decoupled method to build up a three-dimensional device simulator. Moreover, we use the Medici and Davinci software to prove the validity of our 3-D device simulator. In 3-D device application, we use the three-dimensional device simulator to simulate the real silicon-on-insulator (SOI) device. Moreover, we use the body-tied method to obtain more stable device operation. Furthermore, we use the methods of SOI DTMOS and different gate structures to obtain the characteristics of lower power and high efficiency. In the meantime, we developed a quasi-3D device simulator to represent 3-D characteristics by using a 2-D device simulator for memory reduction.en_US
DC.subject三維半導體zh_TW
DC.subject元件模擬zh_TW
DC.subjectSOI MOSFETen_US
DC.subject3D decoupled methoden_US
DC.subjectconnection-tableen_US
DC.subjectthree-dimensional device simulatoren_US
DC.title三維半導體元件模擬器之開發及SOI MOSFET特性分析zh_TW
dc.language.isozh-TWzh-TW
DC.titleDevelopment of 3-D semiconductor device simulator and analysis of SOI MOSFETen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

若有論文相關問題,請聯絡國立中央大學圖書館推廣服務組 TEL:(03)422-7151轉57407,或E-mail聯絡  - 隱私權政策聲明