| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 方啟鑫 | zh_TW |
| DC.creator | Chi-Shin Fang | en_US |
| dc.date.accessioned | 2003-10-5T07:39:07Z | |
| dc.date.available | 2003-10-5T07:39:07Z | |
| dc.date.issued | 2003 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=90521042 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本篇論文研究將針對在p型氮化鎵(p–type GaN)材料上進行高反射率歐姆接觸電極之製作，將紫外光波段上有高反射率的金屬材料，鋁(Al)、銀 (Ag)應用於歐姆接觸電極合金中，在與傳統之p型氮化鎵歐姆接觸電極合金 Ni/Au 相比較，新的金屬合金材料不但可以得到低阻值的歐姆接觸，並且可以提供良好的反射率，極適合作為覆晶發光二極體高紫光反射率接觸電極之應用。
在我們製作電極之前，需先將鎂原子在p型氮化鎵薄膜材料中活化，使其呈現高導電性，活化條件為750℃、30分鐘時具有最高濃度，其值約為1.49×1017 cm-3。而我們嘗試的金屬組合中，Ni/Ag/Au、Pd/Al/Ti/Au、Pd/Pt/Al/Ti/Au、Pd/Ni/Al/Ti/Au都有不錯的電性表現，其特徵阻值(specific contact resistance)分別為1.28×10-3(ohm-cm2)、6.69×10-3(ohm-cm2)、9.58×10-3(ohm-cm2)、1.01×10-2(ohm-cm2)，而對應到370nm的反射率則分別為74%、75%、65%、70%。再針對反射率有上較佳表現的金屬組合探討其熱穩定性，其中Ni/Ag/Au、Pd/Al/Ti/Au、Pd/Pt/Al/Ti/Au有明顯變差的趨勢，因此我們結論為Pd/Ni/Al/Ti/Au為應用上較佳的金屬組合。 | zh_TW |
| dc.description.abstract | In this letter, we reported a low-resistance, thermally stable and high-reflectivity Pd(3 nm)/Ni(2 nm)/Al(150 nm)/Ti(20 nm)/Au(30 nm) Ohmic contact to p-type GaN: Mg (1.5×1017 cm-3 ). The specific contact resistance of the contact is as low as 1.23×10-2 ohm-cm2. After 48 hours annealing in a N2 ambient at 500℃, the specific contact resistance keeps below 1.5 ×10-2 ohm-cm2. The effect of Ni barrier layer of improvement of thermal stability in Pd(3 nm)/Ni(2 nm)/Al(150 nm)/Ti(20 nm)/Au(30 nm) is proposed and discussed in this work. Reflectivity of Pd(3 nm)/Ni(2 nm)/Al(150 nm)/Ti(20 nm)/Au(30 nm) Ohmic contact in the wavelength range of 350 to 400 nm is about 70%, which is expected to be beneficial for the fabrication of high efficiency nitride-based ultraviolet flip-chip light-emitting diodes. | en_US |
| DC.subject | 高反射 | zh_TW |
| DC.subject | 歐姆接觸 | zh_TW |
| DC.subject | ohmic contact | en_US |
| DC.subject | reflectivity | en_US |
| DC.title | 高反射p型氮化鎵歐姆接觸之研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Low-resistance ohmic contacts with high reflectivity on p-type GaN | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |