|DC.description||National Central University||en_US|
|dc.description.abstract||In order to obtain a large-area silicon detector with good performances, such as low leakage current, high breakdown voltage and high reliability, the process improvement and structure design for a large-area silicon strip detector had been studied in this thesis.
Firstly, an overview including fundamental considerations, operation principles, and basic processing has been given, and accordingly the required structure and performance of the detector were summarized. Then a lot of methods to reduce leakage current and furthermore increase breakdown voltage of the device by means of optimized structure and improved processing were presented. With the measured results of test-keys, the simulated device structure had been verified to have the good performances.
A single-sided silicon strip detector with area of 1.12 cm2 and having an average leakage current reduced from 410 down to about 210 nA per diode strip after employing a backside phosphor-doped polysilicon gettering process at 985 ℃ had been obtained. So, it is possible to minimize the device leakage current with the well-developed gettering process.
The experimental results of test-keys not only verified the simulation data but also provided the guidelines to obtain an optimum device structure with specified length of field-plate, spacing between two strips, and lateral radius of curvature of the strip corners.||en_US|
|DC.title||Studies of Process Improvement and Device Design for Large-Area Silicon Detector||en_US|
|DC.publisher||National Central University||en_US|