博碩士論文 91222032 完整後設資料紀錄

DC 欄位	值	語言
DC.contributor	物理學系	zh_TW
DC.creator	林平盛	zh_TW
DC.creator	Ping-Sheng Lin	en_US
dc.date.accessioned	2005-7-25T07:39:07Z
dc.date.available	2005-7-25T07:39:07Z
dc.date.issued	2005
dc.identifier.uri	http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=91222032
dc.contributor.department	物理學系	zh_TW
DC.description	國立中央大學	zh_TW
DC.description	National Central University	en_US
dc.description.abstract	摘 要 本實驗為研究氮化鋁保護層對活化矽離子佈植氮化鎵的影響。利用氮化鋁作為保護層，可減少氮化鎵在高溫熱退火中表面氮的損失，進而提升在較高活化溫度實現高活化率。 我們在室溫下利用氮化鋁靶材射頻濺鍍成長氮化鋁薄膜，發現增加濺鍍功率和氬氣流率可提高氮的含量，使得氮和鋁含量比例更接近實際的氮化鋁薄膜，其特性在高溫下更為穩定，所以更適合作為高溫活化的保護層。 在使用氮化鋁保護層活化矽離子佈植氮化鎵的實驗中，未加氮化鋁保護層的試片僅能做熱退火至1100℃，其活化率約為25％，在更高的熱退火溫度中，活化率因氮化鎵表面的破壞明顯下降。反觀有加氮化鋁保護層的試片則可做熱退火至1200℃，其活化率則明顯提升到75％。	zh_TW
dc.description.abstract	Abstract The application of AlN capping layer on Si-implanted GaN was studied. Under high temperature annealing, AlN capping layer can decreases the loss of nitrogen from GaN surface, and achieve high activation efficiency. We use Aluminum Nitride (AlN) as target material of radio-frequency sputter to grow the AlN films at room temperature. While increasing RF power and gas flow rate of Ar, we find that can increases the percentage of nitrogen in AlN films. These AlN films are suitable for the capping layer due to the high stability under high temperature annealing environment. The activation efficiency is about 25% of samples without AlN capping layer annealed at 1100℃. The activation efficiency will obviously drop because of the destruction of the GaN surface at temperature higher than 1150℃. However, samples with AlN capping layer annealed at 1200℃, the activation efficiency can be 75%.	en_US
DC.subject	矽	zh_TW
DC.subject	氮化鎵	zh_TW
DC.subject	氮化鋁	zh_TW
DC.subject	GaN	en_US
DC.subject	Si	en_US
DC.subject	AlN	en_US
DC.title	氮化鎵磊晶矽離子佈植活化度之研究	zh_TW
dc.language.iso	zh-TW	zh-TW
DC.title	Activation efficiency analysis of Si-Implanted n-GaN	en_US
DC.type	博碩士論文	zh_TW
DC.type	thesis	en_US
DC.publisher	National Central University	en_US