DC 欄位 值 語言 DC.contributor 光電科學與工程學系 zh_TW DC.creator 林桔仁 zh_TW DC.creator Gi-Zen Lin en_US dc.date.accessioned 2004-7-8T07:39:07Z dc.date.available 2004-7-8T07:39:07Z dc.date.issued 2004 dc.identifier.uri http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=91226035 dc.contributor.department 光電科學與工程學系 zh_TW DC.description 國立中央大學 zh_TW DC.description National Central University en_US dc.description.abstract 摘要 本實驗採用大面積化微波電漿輔助化學氣相沉積系統，研究沉積低溫多晶矽的最佳參數。以矽甲烷、氫氣、氬氣為反應氣體原料。藉由改變微波、高週波功率、反應氣體流量、鍍膜時間等參數，來研究對薄膜品質的影響。另外我們以掃描式電子顯微鏡、原子力掃描顯微鏡、X-Ray繞射儀、傅利葉紅外光譜儀、及探針測厚儀來鑑定薄膜的品質與特性。經由實驗觀察，在矽甲烷流量1 scmm、在氫氣流量25 sccm、氬氣流量50 sccm、微波功率700 W、高週波功率15 W、鍍膜時間7 hrs的參數下。薄膜試片在電子顯微鏡與原子力顯微鏡下可以看到較大晶粒尺寸的顆粒沉積，晶粒尺寸可達100 nm。經X-Ray繞射儀分析，沒有明顯的繞射峰、經傅利葉紅外光譜儀分析，薄膜含有Si-H與Si-H2鍵結。 zh_TW dc.description.abstract Abstract It applies microwave PECVD to deposit silicon thin film at low temperature,searching for the best parameter of low temperature poly silicon.Our gas source are silane,hydrogen,and argon,and we study the quality of thin film by changing some parameter.After deposition,we analyse the thin film by SEM,AFM,X-Ray Diffraction,FTIR,and α-Step.We find the best parameter when silane,hydrogen,and argon flow are 1,25,and 50 sccm,respectively,microwave power and rf power are 700W and 15W.respectively,deposition time is 7 hrs.After analysing the sample, we can find grain size which is larger than 100 nm by SEM and AFM,without diffraction peak by XRD,with Si-H and Si-H2 by FTIR. en_US DC.subject 矽薄膜 zh_TW DC.subject 微波 zh_TW DC.subject 電漿 zh_TW DC.subject 多晶矽 zh_TW DC.subject 液晶 zh_TW DC.subject silicon en_US DC.subject microwave en_US DC.subject pecvd en_US DC.title 大面積低溫微波電漿輔助化學氣相沉積矽薄膜之研究 zh_TW dc.language.iso zh-TW zh-TW DC.title Apply microwave PECVD to deposit silicon thin film at low temperature. en_US DC.type 博碩士論文 zh_TW DC.type thesis en_US DC.publisher National Central University en_US