博碩士論文 91521054 完整後設資料紀錄

DC 欄位	值	語言
DC.contributor	電機工程學系	zh_TW
DC.creator	劉育全	zh_TW
DC.creator	Yu-Chuan Liu	en_US
dc.date.accessioned	2004-7-10T07:39:07Z
dc.date.available	2004-7-10T07:39:07Z
dc.date.issued	2004
dc.identifier.uri	http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=91521054
dc.contributor.department	電機工程學系	zh_TW
DC.description	國立中央大學	zh_TW
DC.description	National Central University	en_US
dc.description.abstract	摘要 本論文針對覆晶發光二極體之高反射歐姆接觸電極，對元件熱穩定性影響，做一系列探討，發現傳統作法之覆晶發光二極體，熱穩定性不佳的原因是因為，p-type歐姆接觸電極與高反射金屬層，遇高溫後會相互擴散，因高反射金屬材料如Al、Ag皆為低功函數材料，當元件遇高溫時，高反射金屬材料向下擴散至p-type GaN表面由於與p-type功函數相差太大，接面處型成一個位障，故元件工作電壓因此升高；推知原因後吾人便提出利用製程的手法，將歐姆接觸電極與金屬高反射層區隔開，來改善熱穩定性問題最後再以ITO/SiO2/Al/SiO2組合之高反射歐姆電極製作元件，得到比傳統高反射歐姆電極Ni/Au/Al/Ti/Au製作之元件，高出約15%的反射率，故其外部量子效率，也比傳統高反射歐姆電極製作之覆晶發光二極體元件提升約1.5倍。	zh_TW
dc.description.abstract	A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a reflector layer laid over the passivation layer, and a plurality of electrode pads coupled with the multi-layer structure. In a manufacture process of the light-emitting device, the reflector layer and the passivation layer are patterned to form at least one opening exposing an area of the multi-layer structure. One electrode pad is formed through the opening of the reflector layer and the passivation layer to connect with the multi-layer structure.	en_US
DC.subject	二極體	zh_TW
DC.subject	覆晶	zh_TW
DC.subject	氮化鎵	zh_TW
DC.subject	Flip-chip	en_US
DC.subject	LED	en_US
DC.subject	GaN	en_US
DC.title	氮化銦鎵發光二極體之研製	zh_TW
dc.language.iso	zh-TW	zh-TW
DC.title	Investigation of InGaN/GaN Light Emitting Diode	en_US
DC.type	博碩士論文	zh_TW
DC.type	thesis	en_US
DC.publisher	National Central University	en_US