| dc.description.abstract | The development in Silicon-on-Insulator（SOI）materials and dissimilar materials layer transfer process have led the thin film semiconductor technology into a new era. Smart-cut process is a layer transfer process which combines three main steps: ion implantation, wafer bonding, and layer splitting. However, it still has some drawbacks such as high thermal stress, high energy consumption and low production efficiency, resulting from the thermal treatment. Therefore it is highly expected that an emerging source of energy, the microwave energy, will replace the traditional annealing process and thus solve those problems.
The purpose of this paper is to study the priming excitation effect that microwave activation effect has on the hydrogen ions which were implanted into the silicon wafer. In the experiment, various silicon wafers implanted with different dosage of hydrogen ions were irradiated by microwave at different length of time and microwave power, with a view to examining the relationship between each other. The results indicated that, irradiating at 5W microwave power for 60 seconds, blisters will occur on the surface of the wafers which were implanted with 4×1016ion/㎝2 of hydrogen ions. This showed that the microwave can indeed excite hydrogen ions. On the other hand, the wafers implanted with 5×1015ion/㎝2 of ions had no reactions even when irradiated at higher microwave power. It showed that the implanted hydrogen ions have to reach a critical dosage so as to form blisters under the microwave irradiation. In addition, the higher microwave power and the longer irradiation time, the more hydrogen ions can be excited and gain the energy to form gas molecule. Finally the hydrogen ions aggregated and caused the bubbles to burst or the thin film to ablate. | en_US |