| dc.description.abstract | As the semiconductor industry due to increased demand for technology products and petrochemical crisis caused by the solar industry is flourishing under the influence of such environment, making use of the silicon wafer significant increase in the supply and demand imbalance under the derivative of the original problem of material shortage. Due process yield problems caused by discarded wafers will also increase its value, in terms of cost and resource re-use of relevant considerations, industry demand for wafers of increasing re-use, so the wafer surface treatment technology is urgently needed to break the subject . The traditional wafer surface treatment processes are still the environment of the processing of a number of issues need to be resolved.
In this study, the environmental impact, process efficiency and other factors consideration, the select the for hard-brittle materials with better material removal rate of abrasive jet machining process method , but the traditional abrasive jet impact likely caused by over-processed surface is not smooth, merely to add subsequent treatment of the problems, this study developed a micro- elasticity compound abrasive, using its instant impact with the energy characteristics of the buffer, for abrasive jet machining method to remove the wafer surface hetero layer to improve the shortcomings, and with microscopic jet technology, can effectively improve the excessive processing and the surface roughness of the problem, thus reducing the cost of subsequent treatment processes.
Study is divided into three parts, the first part of the composite abrasive of the preparation and processing: the use of physical heating coated with way the abrasive particles coated on the surface of polymer materials made of spherical composite abrasive, experimental proof of the set temperature of 200 ℃ and the availability of coated particle morphology # 3000, complete uniform composite coated abrasives. The results indicate indeed found to reduce the cracks derivative. The second part is the wafer recycling process: the surface hetero layer for wafer processing using experimental of design to explore the process parameters on surface roughness and material removal rate. The experimental results revealed that the better combination of process parameters: combination is Abrasive mesh size 3000 SiC、Impact angle 30°、stand-off distance 70mm、Impact pressure 0.4 MPa and rotation platform speed 250 rpm. The wafer surface hetero layer is completely removed within 5 minutes and the EDS examination confirms that there are no other elements remained and the result also achieves the surface roughness 0.118μm Ra. The experiment proves that the compound abrasive can completely remove the hetero layer on wafer surface and obtain the better surface roughness. The third part is the development of magnetic elasticity composite abrasive with the magnetic field assisted and then attracting effect, increasing the abrasive material removal efficiency, and improve utilization of abrasive, experimental results show that the use of chemical co-precipitation method to manufacture nano-magnetic powder coated with composite abrasive to form the magnetic-elasticity composite abrasive. It also combines a variety of material removal mechanism.
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